Nanoindentation Derived Mechanical Properties of Au Thin Film Deposited by Pulsed Laser Sputtering on Si Substrate

Author(s):  
E. V. Sadyrin ◽  
A. L. Nikolaev ◽  
A. S. Vasiliev ◽  
I. Yu. Golushko
Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).


2000 ◽  
Vol 2000.75 (0) ◽  
pp. _2-3_-_2-4_
Author(s):  
Takashi IIZUKA ◽  
Akira ONODA ◽  
Toshihiko HOSHIDE

2013 ◽  
Vol 750 ◽  
pp. 244-247
Author(s):  
Toshiaki Abe ◽  
Shouhei Anan ◽  
Fumiya Watanabe ◽  
Ryoji Takahashi ◽  
Yoshifumi Ikoma

Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition has been investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3 pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at 1150 °C resulted in circular patterns with a diameter of ~40 µm on the sample surfaces. In the center of the circular patterns, agglomerations of Au were observed. It was found that the oxide layer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circular patterns. These results indicate that the nanocrystalline Si was grown by the VLS process in which Si atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.


2020 ◽  
Vol 7 (2) ◽  
pp. 026553
Author(s):  
V Plechystyy ◽  
I Shtablavyi ◽  
S Winczewski ◽  
K Rybacki ◽  
S Mudry ◽  
...  

2010 ◽  
Vol 256 (9) ◽  
pp. 2944-2947 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeonggeun Yoo ◽  
Myeongkyu Lee

2013 ◽  
Vol 24 (10) ◽  
pp. 3736-3743 ◽  
Author(s):  
M. Khodaei ◽  
S. A. Seyyed Ebrahimi ◽  
Yong Jun Park ◽  
Seungwoo Song ◽  
Hyun Myung Jang ◽  
...  

2006 ◽  
Vol 6 ◽  
pp. e81-e85 ◽  
Author(s):  
S.W. Han ◽  
H.W. Lee ◽  
H.J. Lee ◽  
J.Y. Kim ◽  
J.H. Kim ◽  
...  

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