Nanostructured Oxide Thermoelectric Materials with Enhanced Phonon Scattering

Author(s):  
Michitaka Ohtaki
Author(s):  
Dursun Ekren ◽  
Feridoon Azough ◽  
Robert Freer

Author(s):  
Yaguo Wang ◽  
Xianfan Xu ◽  
Rama Venkatasubramanian

Thermoelectric materials are characterized with the figure of merit, ZT = S2σT/κ, where T is the temperature, S the Seebeck coefficient, σ the electrical conductivity and κ the thermal conductivity. Many researches have been focused on reducing lattice thermal conductivity through increasing phonon scattering at interfaces. Thin-film superlattices are one of the promising candidates for high ZT thermoelectric materials. Several theoretical models have been used to explain the large ZT in superlattice. One comes from the extra scattering channels at interfaces introduced by the hetero-structure. Another is a result of quantum confinement effect which reduces the phonon group velocity propagating perpendicularly through the superlattice layers through flattening the dispersion curve of acoustic phonons. In this work, ultrafast time-resolved measurements were conducted on Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 superlattice (SL) films to detect coherent acoustic phonons in these materials. Scattering of these phonons is revealed in the Bi2Te3/Sb2Te3 SLs, which comes from the interfaces of the hetero-structure in SL. Also, a decrease of acoustic phonon velocity resulted from folding and flattening of phonons branches is observed. Results show that both interface scattering and the reduced phonon velocity contribute to suppressing the heat transfer process.


2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Eun Sung Kim ◽  
Syed Waqar Hasan ◽  
Soon-Mok Choi ◽  
Kyu Hyoung Lee ◽  
...  

Highly dense pore structure was generated by simple sequential routes using NaCl and PVA as porogens in conventional PbTe thermoelectric materials, and the effect of pores on thermal transport properties was investigated. Compared with the pristine PbTe, the lattice thermal conductivity values of pore-generated PbTe polycrystalline bulks were significantly reduced due to the enhanced phonon scattering by mismatched phonon modes in the presence of pores (200 nm–2 μm) in the PbTe matrix. We obtained extremely low lattice thermal conductivity (~0.56 W m−1 K−1at 773 K) in pore-embedded PbTe bulk after sonication for the elimination of NaCl residue.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1484-1485
Author(s):  
J He ◽  
JR Sootsman ◽  
S Girard ◽  
MG Kanatzidis ◽  
VP Dravid

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2008 ◽  
Vol 47 (19) ◽  
pp. 8429-8436 ◽  
Author(s):  
Hiromichi Ohta ◽  
Kenji Sugiura ◽  
Kunihito Koumoto

2016 ◽  
Vol 3 (8) ◽  
pp. 1600035 ◽  
Author(s):  
Chenguang Fu ◽  
Haijun Wu ◽  
Yintu Liu ◽  
Jiaqing He ◽  
Xinbing Zhao ◽  
...  

2012 ◽  
Vol 24 (32) ◽  
pp. 4440-4444 ◽  
Author(s):  
Jiaqing He ◽  
Steven N. Girard ◽  
Jin-Cheng Zheng ◽  
Lidong Zhao ◽  
Mercouri G. Kanatzidis ◽  
...  

2021 ◽  
Author(s):  
Jamil Ur Rahman ◽  
Gul Rahman ◽  
Soonil Lee

Oxide thermoelectric materials are considered promising for high-temperature thermoelectric applications in terms of low cost, temperature stability, reversible reaction, and so on. Oxide materials have been intensively studied to suppress the defects and electronic charge carriers for many electronic device applications, but the studies with a high concentration of defects are limited. It desires to improve thermoelectric performance by enhancing its charge transport and lowering its lattice thermal conductivity. For this purpose, here, we modified the stoichiometry of cation and anion vacancies in two different systems to regulate the carrier concentration and explored their thermoelectric properties. Both cation and anion vacancies act as a donor of charge carriers and act as phonon scattering centers, decoupling the electrical conductivity and thermal conductivity.


2020 ◽  
Vol 93 (11) ◽  
Author(s):  
Neophytos Neophytou ◽  
Vassilios Vargiamidis ◽  
Samuel Foster ◽  
Patrizio Graziosi ◽  
Laura de Sousa Oliveira ◽  
...  

Abstract The field of thermoelectric materials has undergone a revolutionary transformation over the last couple of decades as a result of the ability to nanostructure and synthesize myriads of materials and their alloys. The ZT figure of merit, which quantifies the performance of a thermoelectric material has more than doubled after decades of inactivity, reaching values larger than two, consistently across materials and temperatures. Central to this ZT improvement is the drastic reduction in the material thermal conductivity due to the scattering of phonons on the numerous interfaces, boundaries, dislocations, point defects, phases, etc., which are purposely included. In these new generation of nanostructured materials, phonon scattering centers of different sizes and geometrical configurations (atomic, nano- and macro-scale) are formed, which are able to scatter phonons of mean-free-paths across the spectrum. Beyond thermal conductivity reductions, ideas are beginning to emerge on how to use similar hierarchical nanostructuring to achieve power factor improvements. Ways that relax the adverse interdependence of the electrical conductivity and Seebeck coefficient are targeted, which allows power factor improvements. For this, elegant designs are required, that utilize for instance non-uniformities in the underlying nanostructured geometry, non-uniformities in the dopant distribution, or potential barriers that form at boundaries between materials. A few recent reports, both theoretical and experimental, indicate that extremely high power factor values can be achieved, even for the same geometries that also provide ultra-low thermal conductivities. Despite the experimental complications that can arise in having the required control in nanostructure realization, in this colloquium, we aim to demonstrate, mostly theoretically, that it is a very promising path worth exploring. We review the most promising recent developments for nanostructures that target power factor improvements and present a series of design ‘ingredients’ necessary to reach high power factors. Finally, we emphasize the importance of theory and transport simulations for materialoptimization, and elaborate on the insight one can obtain from computational tools routinely used in the electronic device communities. Graphical abstract


2019 ◽  
Author(s):  
Yuan‐Hua Lin ◽  
Jinle Lan ◽  
Cewen Nan

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