High-Quality Si Multicrystals with Same Grain Orientation and Large Grain Size by the Newly Developed Dendritic Casting Method for High-Efficiency Solar Cell Applications

Author(s):  
K. Nakajima ◽  
K. Fujiwara ◽  
N. Usami
1998 ◽  
Vol 4 (S2) ◽  
pp. 626-627
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about the Ge surface and the nucleation of GaAs on Ge in the MOCVD environment. In this study, TEM results show that a number microstructural defects are associated with the Ge/GaAs interface and the initial stages of growth.


1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yang ◽  
S. Guha

AbstractOne of the most effective techniques used to obtain high quality amorphous silicon alloys is the use of hydrogen dilution during film growth. The resultant material exhibits a more ordered microstructure and gives rise to high efficiency solar cells. As the hydrogen dilution increases, however, a threshold is reached, beyond which microcrystallites begin to form rapidly. In this paper, we review some of the interesting features associated with the thin film materials obtained from various hydrogen dilutions. They include the observation of linear-like objects in the TEM micrograph, a shift of the principal Si TO band in the Raman spectrum, a sharp, low temperature peak in the H2 evolution spectrum, a shift of the wagging mode in the IR spectrum, and a narrowing of the Si (111) peak in the X-ray diffraction pattern. These spectroscopic tools have allowed us to optimize deposition conditions to near the threshold of microcrystallinity and obtain desired high quality materials. Incorporation of the improved materials into device configuration has significantly enhanced the solar cell performance. Using a spectral-splitting, triple-junction configuration, the spectral response of a typical high efficiency device spans from below 350 nm to beyond 950 nm with a peak quantum efficiency exceeding 90%; the triple stack generates a photocurrent of 27 mA/cm2. This paper describes the effect of the improved materials on various solar cell structures, including a 13% active-area, stable triple-junction device.


1990 ◽  
Vol 192 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Michitoshe Ohnishi ◽  
Yukinori Kuwano

ABSTRACTA total area conversion efficiency of 10.2% has been achieved for a 1Ocm×1Ocm integrated-type single-junction amorphous silicon (a-Si) solar cell submodule. It is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2, including multi-junction cells. The effective area conversion efficiency is as high as 11.3%. The high efficiency is obtained by improving the quality of the i-layer and the p/i buffer layer, as well as by utilizing a highly textured, high-quality transparent electrode. The quality of the i-layer plays a dominant role in the performance of a-Si solar cells, especially in high efficiency cells. Techniques that control the properties of the high-quality a-Si films for the i-layer are described. Electric conductivity, ESR spin density and the Raman spectra of high-quality a-Si:H films are investigated as well as their thickness-dependence and substrate-dependence.A Through-Hole Contact (THC) integrated-type submodule has been developed as a new-type a-Si solar cell module structure. Numerical simulations on the output power of the structure show that the output power can be significantly improved by the THC structure.


2019 ◽  
Vol 3 (7) ◽  
pp. 265-267 ◽  
Author(s):  
Kazuo Nakajima ◽  
Kozo Fujiwara ◽  
Masatoshi Tokairin ◽  
Wugen Pan ◽  
Yoshitaro Nose ◽  
...  

2016 ◽  
Vol 4 (32) ◽  
pp. 12535-12542 ◽  
Author(s):  
Weidong Zhu ◽  
Chunxiong Bao ◽  
Bihu Lv ◽  
Faming Li ◽  
Yong Yi ◽  
...  

A homogeneous cap-mediated crystallization strategy can be used to realize high-quality organolead triiodide perovskite (OTP) films with greatly enhanced solar cell performance.


2016 ◽  
Vol 4 (35) ◽  
pp. 13525-13533 ◽  
Author(s):  
Chien-Hung Chiang ◽  
Jun-Wei Lin ◽  
Chun-Guey Wu

Combining halogen composition and film casting engineering, a high quality homogeneous film with a large area can be prepared using a one-step method. Inverted solar cells and modules, based on mixed-halide perovskite films, achieved the highest efficiency of 16.52% and 14.3%, respectively.


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