One-step fabrication of a mixed-halide perovskite film for a high-efficiency inverted solar cell and module

2016 ◽  
Vol 4 (35) ◽  
pp. 13525-13533 ◽  
Author(s):  
Chien-Hung Chiang ◽  
Jun-Wei Lin ◽  
Chun-Guey Wu

Combining halogen composition and film casting engineering, a high quality homogeneous film with a large area can be prepared using a one-step method. Inverted solar cells and modules, based on mixed-halide perovskite films, achieved the highest efficiency of 16.52% and 14.3%, respectively.

2017 ◽  
Vol 5 (9) ◽  
pp. 2360-2367 ◽  
Author(s):  
Lingang Li ◽  
Fan Zhang ◽  
Yuying Hao ◽  
Qinjun Sun ◽  
Zhanfeng Li ◽  
...  

A well-controlled one-step method, assisted by sec-butyl alcohol solvent engineering and N,N-dimethylformamide solvent annealing under an N2 atmosphere, is developed for the growth of a high quality CH3NH3Pb(1−x)SnxI3 perovskite film.


2016 ◽  
Vol 4 (43) ◽  
pp. 16913-16919 ◽  
Author(s):  
Xingyao Liang ◽  
Wenzhe Li ◽  
Jiangwei Li ◽  
Guangda Niu ◽  
Liduo Wang

Interfacial engineering is an important method to achieve compact and smooth high-quality perovskite films in a one-step method.


2021 ◽  
Vol 21 (8) ◽  
pp. 4367-4371
Author(s):  
Sung Hwan Joo ◽  
Il Tae Kim ◽  
Hyung Wook Choi

The perovskite film—manufactured via a one-step method—was superficially improved through an anti-solvent process to increase solar cell efficiency. Although perovskite synthesis proceeds rapidly, a significant amount of lead iodide residue remains. Well-placed lead iodide in perovskite grains prevents electron–hole recombination; however, when irregularly placed, it interferes with the movement of electron and holes. In this study, we focused on improving the crystallinity of the perovskite layer, as well as reducing lead iodide residues by adding a methylammonium halide material to the anti-solvent. Methylammonium iodide in chlorobenzene used as an anti-solvent reduces lead iodide residues and improves the crystallinity of formamidinium lead iodide perovskite. The improved crystallinity of the perovskite layer increased the absorbance and, with reduced lead iodide residues, increased the efficiency of the perovskite solar cell by 1.914%.


Author(s):  
Y. Higaki ◽  
M. Kato ◽  
M. Aiga ◽  
Y. Yukimoto

2020 ◽  
Vol 10 (37) ◽  
pp. 2001567 ◽  
Author(s):  
Shih‐Han Huang ◽  
Cheng‐Kang Guan ◽  
Pei‐Huan Lee ◽  
Hung‐Che Huang ◽  
Chia‐Feng Li ◽  
...  

1998 ◽  
Vol 4 (S2) ◽  
pp. 626-627
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson

The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about the Ge surface and the nucleation of GaAs on Ge in the MOCVD environment. In this study, TEM results show that a number microstructural defects are associated with the Ge/GaAs interface and the initial stages of growth.


2018 ◽  
Vol 61 (4) ◽  
pp. 476-482 ◽  
Author(s):  
Huijie Qi ◽  
Lihong Niu ◽  
Jie Zhang ◽  
Jian Chen ◽  
Shujie Wang ◽  
...  

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