Growth and Structure of Zinc Oxide Nanostructured Layer Obtained by Spray Pyrolysis

Author(s):  
Son Vo Thach ◽  
Michel Jouan ◽  
Sang Nguyen Xuan ◽  
Thoan Nguyen Hoang ◽  
Hung Pham Pham Phi
2006 ◽  
Vol 37 (11) ◽  
pp. 1276-1279 ◽  
Author(s):  
D. Zaouk ◽  
Y. Zaatar ◽  
R. Asmar ◽  
J. Jabbour

2003 ◽  
Vol 93 (1) ◽  
pp. 632-640 ◽  
Author(s):  
J. Ebothé ◽  
A. El Hichou ◽  
P. Vautrot ◽  
M. Addou

2018 ◽  
Vol 930 ◽  
pp. 79-84
Author(s):  
Juliana Simões Chagas Licurgo ◽  
Herval Ramos Paes Junior

In this work, copper-doped zinc oxide films (ZnO:Cu) were deposited by spray pyrolysis on glass substrates. The influence of doping concentration (0-10 at.%) on morphological, structural, optical and electrical properties of the ZnO:Cu films was investigated. Electrical characterization consisted in measuring the variation of electrical conductivity with temperature; they presented a typical semiconductor material behavior. Based on x-ray diffraction (XRD) analysis, it was able to confirm that the films are polycrystalline having a wurtzite hexagonal structure, preferentially oriented in the c-axis (002), and the crystallite size ranged from 41.60 to 50.70 nm. The optical characterization revealed that ZnO:Cu films present band gap energy between 3.18 and 3.27 eV. The films were homogeneous with good adhesion to the substrate. The results indicate the viability of using them in optoelectronic devices.


2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .


Nova Scientia ◽  
2021 ◽  
Vol 13 (27) ◽  
Author(s):  
Alejandro Ortiz-Morales ◽  
Manuel García-Hipólito ◽  
Epifanio Cruz-Zaragoza ◽  
Ramón Gómez-Aguilar

High gamma dose-resistant undoped ZnO and Tb-doped ZnO thermoluminescent (TL) micro-phosphors were prepared by the spray pyrolysis method. Scanning electron microscopy shows crystalline rods with hexagonal morphology, (0.1-0.4 µm diameter, and about 1 µm length). Raman spectra dispersion reveals a würtzite form. Photoluminescence (PL) study of irradiated zinc oxide films indicates the generation of defects produced by gamma irradiation resulting in an increased probability of electron-hole exciton recombination. PL spectrum shows emission bands from 5D4-7Fj=6,5,4,3 transitions ascribed to Tb3+ dopant in zinc oxide phosphor. X-ray diffraction patterns for both types of films growth (undoped ZnO and Tb-doped ZnO) are typical of zinc oxide crystalline structure, with no noticeable effect of Tb ions. Dosimetric properties, for both samples, show a low TL fading signal and TL reproducibility signal for undoped ZnO and Tb-doped ZnO samples was 29 and 57 %, respectively. The kinetic parameters such as activation energy E, frequency factor s, and Rm values, were obtained by Computerized Glow Curve Deconvolution (CGCD) assuming Mixed Order Kinetic model (MOK). The results show that the MOK well described the glow curves of zinc oxide films. The heating rate effects produced a broadening of glow peak located at 420 K. For purposes like radiation detector, atomic effective number (Zeff) was obtained: 27.74 and 56.47 for undoped ZnO and Tb-doped ZnO samples, respectively. The samples were exposed to gamma radiation in a wide range of 0.25–20 kGy dose. TL properties of undoped ZnO and Tb-doped ZnO samples show that these materials could be used to detect high doses in a gamma radiation field.


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