A finite element method study of the current density distribution in a capacitive intrabody communication system

Author(s):  
Ž. Lučev ◽  
A. Koričan ◽  
M. Cifrek
2001 ◽  
Vol 681 ◽  
Author(s):  
Kenji Yamagata ◽  
Takao Yonehara

ABSTRACTELTRAN is a unique technique to produce the SOI wafers using a porous Si material in semiconductor process. In ELTRAN process, it is required to form the porous Si layer on entire wafer surface uniformly, stably and mass productively without contaminations. In this investigation, we have carried out the simulation of current density distribution to unify the porous layer thickness by finite element method. Canon designed and completed an automatic anodization apparatus. As a result, we could produce the 8 and 6 inches porous Si wafers and ELTRAN SOI wafers stably. And we also developed successfully 300mm ELTRAN SOI wafers with excellent SOI film thickness uniformity.


1998 ◽  
Vol 257 (3) ◽  
pp. 318-330 ◽  
Author(s):  
K. Yanai ◽  
M. Hirai ◽  
T. Ishikawa ◽  
J. Ishizaki ◽  
H. Saitoh

2013 ◽  
Vol 68 (1-2) ◽  
pp. 48-58 ◽  
Author(s):  
Hiroo Numata ◽  
Hiroshi Akatsuka ◽  
Haruaki Matsuura

For a recycling procedure for rare earths from spent hydrogen absorbing alloys by rare earths electrodeposition in a molten salt, the electrolytic bath and the cathode accessories have been optimized by evaluating the appropriate secondary current distribution using finite element method (FEM) computer simulation. The desirable cathode dish as an accessory was designed to prevent drops of less adherent electrodeposits, which improved the current density distribution compared with an a priori determined one. In the bath optimization, a reciprocal proportionality of the difference between the maximum and minimum current densities vs. the ratio of volume to surface area (or electrolyte volume) was found. It was found by FEM that if a resistive floating mass is assumed on the electrolyte surface, the observed necking in the electrodeposit near the electrolyte surface can be analyzed.


2013 ◽  
Vol 764 ◽  
pp. 95-101 ◽  
Author(s):  
Xiu Qing Fu ◽  
Jie Yu Xian ◽  
Min Kang ◽  
Mao Hua Xiao

The processing simulation method of numerical control electrochemical turning (NC-ECT) was presented based on the finite element method (FEM) in this paper. The three-dimensional analysis model of the electric field built in ANSYS software was solved. The current density distribution and the theoretical values of material removed depth per revolution (MRDPR) in different time on the anode were obtained. The experiments were carried out on the NC-ECT lathe, and the measured values of MRDPR were measured, which were compared with the theoretical values. It is indicated that the maximum percentage error between the theoretical values and the measured values is smaller and the simulation method meets the accuracy of the engineering calculations.


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