Electrical Characterization of Solar Cell Materials Using Scanning Probe Microscopy

2012 ◽  
pp. 551-573 ◽  
Author(s):  
Stefan A. L. Weber ◽  
Hans-Jürgen Butt ◽  
Rüdiger Berger
Keyword(s):  
Solar Cell ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Probe Microscopy

Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1430-1433 ◽  
Author(s):  
Alexander Hofer ◽  
Roland Biberger ◽  
Günther Benstetter ◽  
Björn Wilke ◽  
Holger Göbel
Keyword(s):  
Organic Semiconductor ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Semiconductor Films ◽  
Probe Microscopy

Local electrical characterization of SOI wafers by scanning probe microscopy

2002 ◽  
Vol 91-92 ◽  
pp. 156-159 ◽  
Author(s):  
Yoshimori Ishizuka ◽  
Takayuki Uchihashi ◽  
Haruhiko Yoshida ◽  
Seigo Kishino
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Probe ◽  
Probe Microscopy

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

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