On the Use of Electron Microscopy in the Study of Semiconductor Interfaces

1987 ◽  
pp. 109-113
Author(s):  
J.-P Chevalier
Keyword(s):  
Electron Microscopy ◽  
Semiconductor Interfaces

Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V semiconductor interfaces

1996 ◽  
Vol 37 (2-3) ◽  
pp. 143-151 ◽  
Author(s):  
A. Klein ◽  
I. Urban ◽  
P. Ressel ◽  
E. Nebauer ◽  
U. Merkel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Semiconductor Interfaces ◽  
Transmission Electron

High resolution electron microscopy of semiconductor interfaces

1995 ◽  
Vol 150 (1) ◽  
pp. 127-140 ◽  
Author(s):  
A. K. Gutakovskii ◽  
L. I. Fedina ◽  
A. L. Aseev
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Semiconductor Interfaces ◽  
Resolution Electron

A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces.

1983 ◽  
Vol 25 ◽  
Author(s):  
R.C. Pond ◽  
J.P. Gowers ◽  
D.B. Holt ◽  
B.A. Joyce ◽  
J.H. Neave ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Antiphase Domain ◽  
Epitaxial Layers ◽  
Domain Formation ◽  
Antiphase Boundaries ◽  
Substrate Orientation ◽  
Semiconductor Interfaces ◽  
Transmission Electron ◽  
A New Technique ◽  
Symmetry Operations

ABSTRACTObservations of antiphase disorder obtained using a new technique of transmission electron microscopy, in (100) epitaxial layers of GaAs:Ge produced by MBE are presented. The crystallographic origin of this type of disorder is analysed using a recently developed approach. It is shown that antiphase disorder can exist in epitaxial layers where the substrate orientation is of the form {hko}this is consistent with experimental observations that disorder is observed on (100) and (110) substrates, but not on (111) or (211), for example. Antiphase boundaries in {hko} specimens are shown to separate interfacial domains which are energetically degenerate and related by symmetry operations.

Probing semiconductor interfaces by transmission electron microscopy

1993 ◽  
Vol 344 (1673) ◽  
pp. 545-556
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Future Study ◽  
Semiconductor Interfaces ◽  
Transmission Electron ◽  
The Many

The aim of this article is to review the many available techniques in transmission electron microscopy, drawing attention to their particular characteristics and strengths. Where techniques are well established, the reader is referred to standard reference texts. Greater detail is given about new and emerging techniques which hold promise for even more detailed future study of semiconductor interfaces.

High-resolution transmission electron microscopy: A structural and chemical probe of semiconductor systems

1987 ◽  
Vol 45 ◽  
pp. 332-333
Author(s):  
A. Ourmazd
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Structural Information ◽  
Image Interpretation ◽  
Lattice Image ◽  
Semiconductor Interfaces ◽  
Transmission Electron ◽  
Lattice Images ◽  
The Individual

High Resolution Transmission Electron Microscopy (HRTEM) is now a powerful probe for the structural analysis of semiconductor systems. Lattice images can be obtained in a number of orientations, in at least three of which the individual atomic columns can be resolved. However, there exits an important class of problems, whose resolution requires chemical as well as structural information. The identification of individual atomic columns in compound semiconductors, and the atomic configuration of semiconductor/semiconductor interfaces are two important examples.In general, most reflection used to form a lattice image are not particularly sensitive to chemical changes in the sample. The information content of a typical lattice image is therefore strongly dominated by structural details. On the other hand, reflections such as the (200), which are normally forbidden in the diamond structure, come about in the zinc-blende system because of the chemical differences between the occupants of the two sublattices, and are thus highly chemically sensitive. In the “kinematical” thickness region, where simple image interpretation is possible, such reflections are relatively weak and their contribution to the lattice image is dominated by the stronger and chemically insensitive, allowed reflections.

Structural Studies of Metal-Semiconductor Interfaces with High-Resolution Electron Microscopy

1982 ◽  
Vol 14 ◽  
Author(s):  
J. M. Gibson ◽  
R. T. Tung ◽  
J. M. Poate
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Dislocation Core ◽  
High Resolution Electron Microscopy ◽  
Nucleation And Growth ◽  
Interfacial Structure ◽  
Preparation Conditions ◽  
Semiconductor Interfaces ◽  
Resolution Electron ◽  
Crystal Films

ABSTRACTWe have studied interface atomic structure in epitaxial cobalt and nickel disilicides on silicon using high-resolution transmission electron microscopy. By employing UHV techniques during deposition and reaction we have grown truly single-crystalline NiSi2 and CoSi2 films on (111) Si and in the former case on (100) Si. These films are shown to be continuous to below 10Å thickness. By close control over preparation conditions, afforded by UHV, we can greatly influence the nucleation and growth of these films to the extent, for example with NiSi2 on (111)Si, of yielding continuous single-crystal films with either of two orientations as desired. Whilst in the (111) NiSi2 on Si system the interfacial structure invariably appears to well-fit a model in which metal atoms nearest to the interface are 7-fold co-ordinated, for (111) CoSi2 on Si agreement is generally better with a model involving 5-fold co-ordination of these atoms. A misfit dislocation core is also imaged. Results are discussed in the light of silicide nucleation and growth. The structure and stability of the (100) NiSi2 on Si interface is also considered.

Electronic and Atomic Properties of a-C:H/Semiconductor Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
M. Wittmer ◽  
D. Ugolini ◽  
P. Oelhafen
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Semiconductor Materials ◽  
Interfacial Layers ◽  
Ion Channeling ◽  
Atomic Properties ◽  
Semiconductor Interfaces ◽  
Transmission Electron ◽  
Amorphous Hydrogenated Carbon

ABSTRACTWe have investigated the electronic and atomic properties of the interface between amorphous hydrogenated carbon (a-C:H) films and the semiconductor materials Si, Ge and GaAs with photoelectron spectroscopy, high resolution transmission electron microscopy and ion channeling technique. The different properties of the interfacial layers are summarized and compared to the adhesion quality of a-C:H films on these semiconductor materials.

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