Polytype Change of Silicon Carbide at High Temperatures

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

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Solid State Reactions Between V-Base Alloys and Silicon Carbide at High Temperatures

Reduced Activation Materials for Fusion Reactors ◽

10.1520/stp24962s ◽

2009 ◽

pp. 236-236-12

Author(s):

K Kurokawa ◽

K Miyamoto ◽

R Nagasaki

Keyword(s):

Silicon Carbide ◽

Solid State ◽

High Temperatures ◽

Solid State Reactions

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Characterization of Boron Nitride Coated Silicon Carbide Fibers and Composites

Microscopy and Microanalysis ◽

10.1017/s1431927600010552 ◽

1997 ◽

Vol 3 (S2) ◽

pp. 733-734

Author(s):

Mani Gopal

Keyword(s):

Silicon Carbide ◽

Boron Nitride ◽

High Temperatures ◽

Specimen Preparation ◽

Ion Milling ◽

Sic Fibers ◽

Silicon Carbide Fibers ◽

Pull Out ◽

Sic Composites

Silicon carbide (SiC) composites are receiving much attention for structural use at high temperatures. One class of composites are those reinforced with SiC fibers. The SiC fibers are coated with boron nitride (BN) which is weakly bonded to the fiber. During fracture, the coating deflects cracks causing pull-out of the fibers (Fig. 1). This process of fiber pull-out consumes energy and increases the toughness of the composite. Although much work has been done on characterizing these materials by SEM, not much has been done using TEM due to difficulties in specimen preparation. The purpose of this study is to characterize these fibers and composites using conventional and analytical TEM.In this study, TEM specimens were prepared by dimpling and ion milling. Careful control of the preparation was needed to ensure the integrity of the SiC-BN interface. Figure 2a is a TEM image of the fiber showing delamination at the SiC-BN interface.

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Steam Oxidation of Silicon Carbide at High Temperatures for the Application as Accident Tolerant Fuel Cladding, an Overview

Thermo ◽

10.3390/thermo1020011 ◽

2021 ◽

Vol 1 (2) ◽

pp. 151-167

Author(s):

Hai V. Pham ◽

Masaki Kurata ◽

Martin Steinbrueck

Keyword(s):

Silicon Carbide ◽

High Temperatures ◽

Nuclear Power ◽

Steam Oxidation ◽

Severe Accident ◽

Light Water Reactors ◽

Severe Accidents ◽

Potential Benefits ◽

Water Reactors ◽

Accident Conditions

Since the nuclear accident at Fukushima Daiichi Nuclear Power Station in 2011, a considerable number of studies have been conducted to develop accident tolerant fuel (ATF) claddings for safety enhancement of light water reactors. Among many potential ATF claddings, silicon carbide is one of the most promising candidates with many superior features suitable for nuclear applications. In spite of many potential benefits of SiC cladding, there are some concerns over the oxidation/corrosion resistance of the cladding, especially at extreme temperatures (up to 2000 °C) in severe accidents. However, the study of SiC steam oxidation in conventional test facilities in water vapor atmospheres at temperatures above 1600 °C is very challenging. In recent years, several efforts have been made to modify existing or to develop new advanced test facilities to perform material oxidation tests in steam environments typical of severe accident conditions. In this article, the authors outline the features of SiC oxidation/corrosion at high temperatures, as well as the developments of advanced test facilities in their laboratories, and, finally, give some of the current advances in understanding based on recent data obtained from those advanced test facilities.

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