scholarly journals Comment on “Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures” [Appl. Phys. Lett. 109, 011604 (2016)]

2016 ◽  
Vol 109 (19) ◽  
pp. 196101 ◽  
Author(s):  
Sima Dimitrijev
2016 ◽  
Vol 109 (19) ◽  
pp. 196102 ◽  
Author(s):  
Aiswarya Pradeepkumar ◽  
Neeraj Mishra ◽  
Atieh Ranjbar Kermany ◽  
John J. Boeckl ◽  
Jack Hellerstedt ◽  
...  

2016 ◽  
Vol 109 (1) ◽  
pp. 011604 ◽  
Author(s):  
Aiswarya Pradeepkumar ◽  
Neeraj Mishra ◽  
Atieh Ranjbar Kermany ◽  
John J. Boeckl ◽  
Jack Hellerstedt ◽  
...  

2016 ◽  
Vol 214 (4) ◽  
pp. 1600437 ◽  
Author(s):  
Atieh R. Kermany ◽  
James S. Bennett ◽  
Victor M. Valenzuela ◽  
Warwick P. Bowen ◽  
Francesca Iacopi

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.


1997 ◽  
Vol 3 (S2) ◽  
pp. 733-734
Author(s):  
Mani Gopal

Silicon carbide (SiC) composites are receiving much attention for structural use at high temperatures. One class of composites are those reinforced with SiC fibers. The SiC fibers are coated with boron nitride (BN) which is weakly bonded to the fiber. During fracture, the coating deflects cracks causing pull-out of the fibers (Fig. 1). This process of fiber pull-out consumes energy and increases the toughness of the composite. Although much work has been done on characterizing these materials by SEM, not much has been done using TEM due to difficulties in specimen preparation. The purpose of this study is to characterize these fibers and composites using conventional and analytical TEM.In this study, TEM specimens were prepared by dimpling and ion milling. Careful control of the preparation was needed to ensure the integrity of the SiC-BN interface. Figure 2a is a TEM image of the fiber showing delamination at the SiC-BN interface.


Author(s):  
G. Wagner ◽  
D. Schulz ◽  
D. Siche

2002 ◽  
Vol 236 (1-3) ◽  
pp. 101-112 ◽  
Author(s):  
U Forsberg ◽  
Ö Danielsson ◽  
A Henry ◽  
M.K Linnarsson ◽  
E Janzén

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