The Vibrational Density of States of Amorphous Semiconductors

Author(s):  
D. L. Weaire
1998 ◽  
Vol 20 (3) ◽  
pp. 143-145 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro

Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is evaluated and discussed at the far-infrared range for a-Ge and a-Si.


Soft Matter ◽  
2016 ◽  
Vol 12 (4) ◽  
pp. 1210-1218 ◽  
Author(s):  
Jeetu S. Babu ◽  
Chandana Mondal ◽  
Surajit Sengupta ◽  
Smarajit Karmakar

The conditions which determine whether a material behaves in a brittle or ductile fashion on mechanical loading are still elusive and comprise a topic of active research among materials physicists and engineers.


2002 ◽  
Vol 82 (5) ◽  
pp. 533-539 ◽  
Author(s):  
L. Saviot ◽  
E. Duval ◽  
J. F. Jal ◽  
A. J. Dianoux ◽  
V. A. Bershtein ◽  
...  

2017 ◽  
Vol 139 (5) ◽  
Author(s):  
Chengcheng Deng ◽  
Xiaoxiang Yu ◽  
Xiaoming Huang ◽  
Nuo Yang

A new way was proposed to enhance the interfacial thermal conductance (ITC) of silicon carbide (SiC) composite through the overlapped carbon nanotubes (CNTs) and intertube atoms. By nonequilibrium molecular dynamics (NEMD) simulations, the dependence of ITC on both the number of intertube atoms and the temperature was studied. It is indicated that the ITC can be significantly enhanced by adding intertube atoms and finally becomes saturated with the increase of the number of intertube atoms. And the mechanism is discussed by analyzing the probability distributions of atomic forces and vibrational density of states (VDOS). This work may provide some guidance on enhancing the ITC of CNT-based composites.


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