The Use of SIMS for Semiconductor Processing Technology: The Influence of Oxygen at Depth Profiling

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

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Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130298 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1132-1133

Author(s):

Mark Denker ◽

Jennifer Wall ◽

Mark Ray ◽

Richard Linton

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Incidence Angle ◽

Ion Beam ◽

Depth Profiling ◽

Depth Resolution ◽

Ion Beams ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Trace Impurities ◽

Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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Digital differential hysteresis iimage processing displays what the microscope acquires but the eye can't see

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100139585 ◽

1995 ◽

Vol 53 ◽

pp. 642-643

Author(s):

Klaus-Ruediger Peters

Keyword(s):

Image Processing ◽

Visual System ◽

High Precision ◽

Image Data ◽

Processing Technology ◽

Output Data ◽

Contrast Resolution ◽

Pixel Intensity ◽

Data Reading ◽

Hysteresis Properties

Differential hysteresis processing is a new image processing technology that provides a tool for the display of image data information at any level of differential contrast resolution. This includes the maximum contrast resolution of the acquisition system which may be 1,000-times higher than that of the visual system (16 bit versus 6 bit). All microscopes acquire high precision contrasts at a level of <0.01-25% of the acquisition range in 16-bit - 8-bit data, but these contrasts are mostly invisible or only partially visible even in conventionally enhanced images. The processing principle of the differential hysteresis tool is based on hysteresis properties of intensity variations within an image.Differential hysteresis image processing moves a cursor of selected intensity range (hysteresis range) along lines through the image data reading each successive pixel intensity. The midpoint of the cursor provides the output data. If the intensity value of the following pixel falls outside of the actual cursor endpoint values, then the cursor follows the data either with its top or with its bottom, but if the pixels' intensity value falls within the cursor range, then the cursor maintains its intensity value.

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