Fast Energy Relaxation of Hot Electrons in Bulk GaAs and Multi-Quantum Wells

1986 ◽  
pp. 227-230
Author(s):  
C. H. Yang ◽  
S. A. Lyon
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Hot Electrons ◽  
Bulk Gaas

Effects of acoustic anisotropy and screening on the energy relaxation of hot electrons in heterojunctions and quantum wells

2002 ◽  
Vol 65 (8) ◽  
Author(s):  
D. Lehmann ◽  
A. J. Kent ◽  
Cz. Jasiukiewicz ◽  
A. J. Cross ◽  
P. Hawker ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Relaxation ◽  
Hot Electrons ◽  
Acoustic Anisotropy

Hot Electron Relaxation in Quantum Wells

1986 ◽  
Vol 77 ◽  
Author(s):  
S. A. Lyon
Keyword(s):  
Crystal Growth ◽  
Steady State ◽  
Quantum Wells ◽  
Hot Electrons ◽  
Two Dimensional ◽  
Hot Electron ◽  
Carrier Distribution ◽  
Bulk Gaas ◽  
Bulk Semiconductors ◽  
Electron Relaxation

ABSTRACTHot electron relaxation in bulk semiconductors has been studied for several decades, but only through recent advances in crystal growth has it become possible to investigate the ther-malization of hot quasi-two-dimensional carriers in quantum wells. These same advances have opened the possibility of constructing various semiconductor devices which rely on hot electrons for their operation. We discuss experimental results on the energy relaxation of hot electrons in GaAs/AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photoexcited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared to results from similar experiments with bulk GaAs.

Spatially resolved photocarrier energy relaxation in low-doped bulk GaAs

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
T. Kiessling ◽  
J.-H. Quast ◽  
A. Kreisel ◽  
T. Henn ◽  
W. Ossau ◽  
...  
Keyword(s):  
Energy Relaxation ◽  
Bulk Gaas ◽  
Spatially Resolved

Assignments of transitions in optically-pumped NMR of GaAs/AlGaAs quantum wells on a bulk GaAs substrate

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
E. L. Sesti ◽  
D. D. Wheeler ◽  
S. E. Hayes ◽  
D. Saha ◽  
G. D. Sanders ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Gaas Substrate ◽  
Optically Pumped ◽  
Bulk Gaas ◽  
Optically Pumped Nmr

Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
Keyword(s):  
Quantum Wells ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Relaxation Rates

INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

2012 ◽  
Vol 21 (04) ◽  
pp. 1250050 ◽  
Author(s):  
MAREK WICHTOWSKI ◽  
ANDRZEJ ZIOLKOWSKI ◽  
EWA WEINERT-RACZKA ◽  
BLAZEJ JABLONSKI ◽  
WOJCIECH KARWECKI
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Hot Electrons ◽  
Nonlinear Transport ◽  
Field Range ◽  
Fringe Contrast ◽  
Recording Time ◽  
Semiconductor Quantum Wells ◽  
Charge Field

Nonlinear transport of hot electrons in semi-insulating GaAs / AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.

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