GaAs Digital Integrated Circuits for Ultra High Speed LSI/VLSI

1980 ◽  
pp. 128-177 ◽  
Author(s):  
R. C. Eden ◽  
B. M. Welch
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Digital Integrated Circuits ◽  
Ultra High Speed

Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits

2003 ◽  
Author(s):  
A.S. Brown ◽  
C.S. Chou ◽  
M.J. Delaney ◽  
C.E. Hooper ◽  
J.F. Jensen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
High Speed ◽  
Ultra High Speed ◽  
Inp Hemt

HIGH SPEED DIGITAL CIRCUIT TECHNOLOGY

1995 ◽  
Vol 06 (01) ◽  
pp. 163-210 ◽  
Author(s):  
STEPHEN I. LONG
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Material Properties ◽  
High Speed ◽  
Digital Circuit ◽  
Bipolar Transistor ◽  
Clock Frequency ◽  
Digital Integrated Circuits ◽  
Heterojunction Devices ◽  
Circuit Technology

The performance of high speed digital integrated circuits, defined here as those requiring operation at high clock frequency, is generally more sensitive to material properties and process techniques than ICs used at lower frequencies. Obtaining high speed and low power concurrently is especially challenging. Circuit architectures must be selected for the device and application appropriately. This paper presents simple models for high speed digital IC performance and applies these to the FET and bipolar transistor. Heterojunction devices are compared with those using single or binary materials. Circuits for high speed SSI and low power VLSI applications are described, and their performance is surveyed.

Chapter 4 Ultra-High-Speed HEMT Integrated Circuits

1987 ◽  
pp. 249-278 ◽  
Author(s):  
M. Abe ◽  
T. Mimura ◽  
K. Nishiuchi ◽  
A. Shibatomi ◽  
M. Kobayashi ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Ultra High Speed
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