Quantum Dot Gate Field-Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter

2013 ◽  
pp. 65-80
Author(s):  
Supriya Karmakar
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Model ◽  
Ternary Logic ◽  
Effect Transistor

Implementation of Membership Function using Spatial Wave-Function Switched FETs

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450007 ◽  
Author(s):  
Supriya Karmakar ◽  
John A Chandy ◽  
Faquir C. Jain
Keyword(s):  
Wave Function ◽  
Membership Function ◽  
Applied Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carrier Concentration ◽  
Circuit Model ◽  
Digital To Analog Converter ◽  
Effect Transistor ◽  
Spatial Wave Function

Spatial wave-function switched field effect transistor (SWSFET) switches the current flow between different channels inside the FET based on the applied voltage in its gate terminal. SWSFET can be used to implement multi-valued logic circuit with less number of circuit elements. Recently we presented unipolar inverter circuit using SWSFET. In this paper we develop a circuit model of SWSFET based on BSIM 3.2.0 and BSIM 3.2.4 and implement membership function using that circuit model of SWSFET. The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels inside the substrate of the semiconductor. Applied voltage at the gate region of the SWSFET, switches the charge carrier concentration in different channels from source to drain region. A circuit model of SWSFET is developed in BSIM 3.2.0. Membership function is implemented using the circuit model of the SWSFET. Membership function implementation using less number of SWSFET will reduce the device count in future analog-to-digital converter (ADC) and digital-to-analog converter (DAC) circuits.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

2014 ◽  
Vol 102 ◽  
pp. 82-86 ◽  
Author(s):  
Yukinori Morita ◽  
Takahiro Mori ◽  
Shinji Migita ◽  
Wataru Mizubayashi ◽  
Akihito Tanabe ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Model ◽  
Parallel Electric Field ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Surface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memories

ACS Nano ◽  
2018 ◽  
Vol 12 (8) ◽  
pp. 7701-7709 ◽  
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Sung Hoon Noh ◽  
Chan Eon Park ◽  
Jaeyoung Jang
Keyword(s):  
Surface Modification ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Floating Gates ◽  
Cdse Quantum Dot ◽  
Effect Transistor

scholarly journals A tunable colloidal quantum dot photo field-effect transistor

2011 ◽  
Vol 99 (10) ◽  
pp. 101102 ◽  
Author(s):  
Subir Ghosh ◽  
Sjoerd Hoogland ◽  
Vlad Sukhovatkin ◽  
Larissa Levina ◽  
Edward H. Sargent
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Colloidal Quantum Dot ◽  
Effect Transistor

Photojunction Field-Effect Transistor Based on a Colloidal Quantum Dot Absorber Channel Layer

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 356-362 ◽  
Author(s):  
Valerio Adinolfi ◽  
Illan J. Kramer ◽  
André J. Labelle ◽  
Brandon R. Sutherland ◽  
S. Hoogland ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Layer ◽  
Colloidal Quantum Dot ◽  
Effect Transistor

Memory Operation of InAs Quantum Dot Field Effect Transistor

2000 ◽  
Author(s):  
Heesoo Son ◽  
Junggun Kim ◽  
Moondeok Kim ◽  
Songcheol Hong
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Inas Quantum Dot

Ge/Si quantum-dot metal–oxide–semiconductor field-effect transistor

2002 ◽  
Vol 80 (25) ◽  
pp. 4783-4785 ◽  
Author(s):  
A. I. Yakimov ◽  
A. V. Dvurechenskii ◽  
V. V. Kirienko ◽  
A. I. Nikiforov
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Quantum Dot ◽  
Effect Transistor

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

Photon number resolving detector based on a quantum dot field effect transistor

2007 ◽  
Vol 90 (18) ◽  
pp. 181114 ◽  
Author(s):  
B. E. Kardynał ◽  
S. S. Hees ◽  
A. J. Shields ◽  
C. Nicoll ◽  
I. Farrer ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Photon Number ◽  
Effect Transistor
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