Sacrificial Oxide Etching Compatible with Aluminium Metallization

1998 ◽  
pp. 197-199
Author(s):  
P. T. J. Gennissen ◽  
P. J. French
Keyword(s):  
Oxide Etching

scholarly journals Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3026
Author(s):  
Woo-Jae Kim ◽  
In-Young Bang ◽  
Ji-Hwan Kim ◽  
Yeon-Soo Park ◽  
Hee-Tae Kwon ◽  
...  
Keyword(s):  
Greenhouse Gas ◽  
Silicon Oxide ◽  
Gas Analysis ◽  
Gas Analyzer ◽  
Dc Offset ◽  
Cleaning Performance ◽  
Oxide Etching ◽  
Residual Gas ◽  
Etch Rates ◽  
Very High

The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.

Comparison of Different Ways of Extra Phosphorus Implantation Which Decrease the Threshold Voltage and On-resistance of UMOS

2021 ◽  
Vol 35 (11) ◽  
pp. 1398-1399
Author(s):  
X. Zhou ◽  
Q. Feng
Keyword(s):  
Threshold Voltage ◽  
Source Region ◽  
Oxide Etching ◽  
Field Oxide

A method to decrease the threshold voltage and on-resistance is discussed in this paper, which is adding extra phosphorus implantation into silicon. There are two ways to implant extra phosphorus without adding a mask. The first way is to implant extra phosphorus after the field oxide etching, and the second way is to implant extra phosphorus with the source region mask before the N+ implantation. Compare the results of the two ways to find their characteristics and choose the appropriate one.

Express-Method for the Study of Electrolyte Anion Profiles in the Bulk of Dense Anodic Alumina Films

MRS Advances ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 569-574
Author(s):  
Valentina Yakovtseva ◽  
Dimitry Shimanovich ◽  
Vitaly Sokol ◽  
Alexey Subko ◽  
Vitaly Bondarenko
Keyword(s):  
Anodic Aluminum Oxide ◽  
Materials Science ◽  
Anodic Alumina ◽  
Electrolyte Composition ◽  
Express Method ◽  
Anodic Aluminum Oxide Film ◽  
Alumina Films ◽  
Anodic Aluminum ◽  
Oxide Etching ◽  
Anion Distribution

ABSTRACTThe procedure proposed is the express method for the study of anion distribution profiles in the anodic aluminum oxide film. The method consists in measuring the variation of the steady-state electrode potential during the oxide etching. It allows the influence of the initial aluminum composition, the electrolyte composition, anodization regimes, etc. on the characteristics of dense anodic alumina films to be studied. The method developed can be used to study a chemical evolution in anodic alumina formed to correlate with modelling and simulations across materials science disciplines.

Mechanisms of silicon oxide etching in a highly polymerized fluorocarbon plasma

1992 ◽  
Author(s):  
Naokatsu Ikegami ◽  
Nobuo Ozawa ◽  
Yasuhiro Miyakawa ◽  
Jun Kanamori
Keyword(s):  
Silicon Oxide ◽  
Oxide Etching ◽  
Fluorocarbon Plasma

Study of wafer arcing on oxide etching process for advance VLSI technology

2004 ◽  
Author(s):  
Ming-Shing Fu ◽  
Ming-Chyi Liu ◽  
Ming-Shyue Hsieh ◽  
Chuan-Chieh Huang ◽  
Shou-Wen Kuo
Keyword(s):  
Etching Process ◽  
Vlsi Technology ◽  
Oxide Etching
Sign in / Sign up

Export Citation Format

Share Document