A MATLAB-Based Simulator for Amorphous Silicon and Polycrystalline Silicon Thin Film Transistor

2017 ◽  
pp. 733-744
Author(s):  
Suman Das ◽  
Subham Datta ◽  
Somenath Chatterjee
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Hybrid Amorphous and Polycrystalline Silicon Devices for Large-Area Electronics

1998 ◽  
Vol 508 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Short Channel ◽  
Simple Modification ◽  
Large Area Electronics

AbstractDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and short-channel amorphous silicon thin film transistors have been demonstrated.

Hybrid Amorphous and Polycrystalline Silicon Devices For Large-Area Electronics

1998 ◽  
Vol 507 ◽  
Author(s):  
P. Mei ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
G. Anderson ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Hybrid Structure ◽  
Large Area ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Simple Modification ◽  
Large Area Electronics

ABSTRACTDistinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and shortchannel amorphous silicon thin film transistors have been demonstrated.

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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