The Elastic Constants in Opto-electronic Materials Under Terahertz Frequency

2021 ◽  
pp. 301-323
Author(s):  
R. Paul ◽  
J. Pal ◽  
S. Chakrabarti ◽  
B. Chatterjee ◽  
P. K. Das ◽  
...  
Keyword(s):  
Elastic Constants ◽  
Electronic Materials ◽  
Terahertz Frequency

The Carrier Statistics, Terahertz Frequency, Extremely Degenerate Opto-electronic Materials and All That

2021 ◽  
pp. 107-139
Author(s):  
R. Paul ◽  
S. Chakrabarti ◽  
B. Chatterjee ◽  
P. K. Das ◽  
T. De ◽  
...  
Keyword(s):  
Electronic Materials ◽  
Terahertz Frequency

Influence of Terahertz Frequency on the Elastic Constants in 2D Systems

2021 ◽  
pp. 59-105
Author(s):  
P. K. Das ◽  
R. Paul ◽  
S. Chakrabarti ◽  
B. Chatterjee ◽  
S. Pahari ◽  
...  
Keyword(s):  
Elastic Constants ◽  
2D Systems ◽  
Terahertz Frequency

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

ELASTIC CONSTANTS OF IRON IN THE VICINITY OF THE CURIE POINT

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-415-C1-416 ◽  
Author(s):  
L. ALBERTS ◽  
M. BOHLMANN ◽  
H. L. ALBERTS
Keyword(s):  
Elastic Constants ◽  
Curie Point

TEMPERATURE AND MAGNETIC FIELD DEPENDENCE OF THE ELASTIC CONSTANTS IN Nd3Se4

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-461-C8-462 ◽  
Author(s):  
H. Fütterer ◽  
T. Yohannes ◽  
H. Bach ◽  
J. Pelzl ◽  
K. Nahm ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Elastic Constants ◽  
Magnetic Field Dependence

TO THE QUESTION OF THE SYSTEMATIC NATURE OF ELECTRONIC EDUCATIONAL MATERIALS FOR HIGHER EDUCATION

2019 ◽  
pp. 54-62
Author(s):  
K. R. Ovchinnikova
Keyword(s):  
Learning Process ◽  
Information Technologies ◽  
Electronic Materials ◽  
Subject Area ◽  
Design Activity ◽  
Learning Technology ◽  
Educational Materials ◽  
Scientific Publications ◽  
Structured Information ◽  
Single Complex

The relevance of the issue under consideration in the article is connected with the confusion in scientific publications of the concepts of “electronic educational materials” and “electronic educational resources”. The article discusses the concept of “electronic educational materials” from the perspective of general systems theory. And their system character is proved. This allows them to be represented as a single complex of structured information of a specific subject area and didactic materials. These didactic materials support the learning process at all stages of its didactic cycle in accordance with the chosen learning technology based on the didactic capabilities of information technologies. It is concluded that the system of high school electronic materials allows to expand the boundaries of the design activity of the teacher, provide management of the student’s thinking activity, to implement a competence approach to the learning process at university

Sign in / Sign up

Export Citation Format

Share Document