Analysis and Implementation of Less Delay and Low Area DT Multiplier

Author(s):  
J. N. Swaminathan ◽  
K. Ambujam ◽  
V. Madhava Reddy ◽  
P. Mahesh ◽  
Ch. Harika ◽  
...  
Keyword(s):  
Author(s):  
Peng Yin ◽  
Zhou Shu ◽  
Yingjun Xia ◽  
Tianmei Shen ◽  
Xiao Guan ◽  
...  
Keyword(s):  

2021 ◽  
Vol 183 ◽  
pp. 108040
Author(s):  
Hamdan Abdellatef ◽  
Mohamed Khalil-Hani ◽  
Nasir Shaikh-Husin ◽  
Sayed Omid Ayat

Author(s):  
Yuan-Ho Chen ◽  
Chieh-Yang Liu

AbstractIn this paper, a very-large-scale integration (VLSI) design that can support high-efficiency video coding inverse discrete cosine transform (IDCT) for multiple transform sizes is proposed. The proposed two-dimensional (2-D) IDCT is implemented at a low area by using a single one-dimensional (1-D) IDCT core with a transpose memory. The proposed 1-D IDCT core decomposes a 32-point transform into 16-, 8-, and 4-point matrix products according to the symmetric property of the transform coefficient. Moreover, we use the shift-and-add unit to share hardware resources between multiple transform dimension matrix products. The 1-D IDCT core can simultaneously calculate the first- and second-dimensional data. The results indicate that the proposed 2-D IDCT core has a throughput rate of 250 MP/s, with only 110 K gate counts when implemented into the Taiwan semiconductor manufacturing (TSMC) 90-nm complementary metal-oxide-semiconductor (CMOS) technology. The results show the proposed circuit has the smallest area supporting the multiple transform sizes.


Author(s):  
Chaudhry Indra Kumar

The energy-efficient circuits, though important in IoT and biomedical applications, are vulnerable to soft errors due to their low voltages and small node capacitances. This paper presents an energy-efficient low-area double-node-upset-hardened latch (EEDHL). The proposed latch enhances the radiation hardness by employing a restorer circuit based on a Muller C-element and a memory element. The post-layout simulations show that the EEDHL improves the area–energy–delay product (AEDP) by [Formula: see text]80% compared to the newly reported double-node-upset-resilient latch (DNURL) in STMicroelectronics 65-nm CMOS technology. Synopsys TCAD mixed-mode simulations in 32-nm CMOS technology framework are also used to validate the proposed DNU-hardened latch. The proposed EEDHL effectively mitigates the DNU at the strike with a linear energy transfer (LET) equal to 160[Formula: see text][Formula: see text]/mg in 32-nm CMOS technology.


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