Inhibition of intermediate temperature degradation of calcium aluminosilicate/Nicalon by high temperature pretreatment

1993 ◽  
Vol 14 (17) ◽  
pp. 1223-1226 ◽  
Author(s):  
K. P. Plucknett ◽  
M. H. Lewis
Weed Science ◽  
2011 ◽  
Vol 59 (2) ◽  
pp. 182-187 ◽  
Author(s):  
Grace E-K. Bolfrey-Arku ◽  
Bhagirath S. Chauhan ◽  
David E. Johnson

Itchgrass is a weed of many crops throughout the tropics and one of the most important grass weeds of rainfed rice. Experiments were conducted in the laboratory and screenhouse to determine the effects of light, alternating day/night temperatures, high temperature pretreatment, water stress, seed burial depth, and rice residue on seed germination and seedling emergence of itchgrass in the Philippines. Two populations were evaluated and the results were consistent for both populations. Germination in the light/dark regime was greater at alternating day/night temperatures of 25/15 C than at 35/25, 30/20, or 20/10 C. Light was not a requirement for germination, but a light/dark regime increased germination by 96%, across temperature and population. A 5-min high temperature pretreatment for 50% inhibition of maximum itchgrass germination ranged from 145 to 151 C with no germination when seeds were exposed to ≥ 180 C. The osmotic potential required for 50% inhibition of maximum germination was −0.6 MPa for itchgrass, although some seeds germinated at −0.8 MPa. Seedling emergence was greatest for seeds placed on the soil surface, and emergence declined with increasing soil burial depth; no seedlings emerged from seeds buried at 10 cm. The addition of rice residue to soil surface in pots at rates equivalent to 4 to 6 Mg ha−1reduced itchgrass seedling emergence. Since seedling emergence was greatest at shallow depths and germination was stimulated by light, itchgrass may become a problem in systems where soil is cultivated at shallow depths. Knowledge gained in this study could contribute to developing components of integrated weed management strategies for itchgrass.


1994 ◽  
Vol 339 ◽  
Author(s):  
S. D. Wolter ◽  
B. R. Stoner ◽  
P. C. Yang ◽  
W. Lui ◽  
J. T. Glass

ABSTRACTDiamond nucleation has been investigated on a variety of potential heteroepitaxial substrate materials. Previous work in this laboratory has demonstrated heteroepitaxial nucleation on both Si and SiC substrates via bias-enhanced nucleation (BEN). In this study the effects of BEN of diamond on refractory metal substrates is investigated in detail. Initial data suggest a strong correlation between the carbide forming nature of the substrate material and the rate of nucleation during biasing. Our second avenue of research involves low pressure diamond growth on nickel. This material is a promising material due to its close lattice match and recent evidence of epitaxy reported by other researchers. To form heteroepitaxial diamond on nickel a high temperature pretreatment routine has been established and is the basis for this area of research. The relative importance of hydrogen absorption during this routine is explored and correlated to the formation and degree of diamond epitaxy.


2017 ◽  
Vol 164 ◽  
pp. 284-293 ◽  
Author(s):  
Yani Jiang ◽  
Jiping Zhou ◽  
Qi Zhang ◽  
Guoqi Zhao ◽  
Lin Heng ◽  
...  

2010 ◽  
Vol 72 ◽  
pp. 337-342
Author(s):  
Masakazu Yarimitsu ◽  
Masaru Aniya

The pressure dependence of the diffusion coefficient in the superionic α- and β-phases of Ag3SI has been studied by using the method of molecular dynamics. It is shown that in the high temperature α-phase, the Ag diffusion coefficient decreases with pressure. On the hand, in the intermediate temperature β-phase, the Ag diffusion coefficient exhibits a maximum at around 2.8 GPa. The structural origin of this behavior is discussed through the pressure dependence of the pair distribution functions.


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