Characterization of layers produced by a reactive deposition technique: An EDAX and ESCA study

1987 ◽  
Vol 329 (2-3) ◽  
pp. 400-402
Author(s):  
K. Bange ◽  
G. Weinberg ◽  
S. Krause ◽  
K. Horn
Keyword(s):  
Deposition Technique ◽  
Reactive Deposition

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Fabrication and characterization of thin targets of nickel (61,62Ni) isotopes by physical vapour deposition technique for nuclear reaction studies

Vacuum ◽  
2019 ◽  
Vol 163 ◽  
pp. 148-157 ◽  
Author(s):  
Nabendu Kumar Deb ◽  
Kushal Kalita ◽  
S.R. Abhilash ◽  
Pankaj K. Giri ◽  
Rohan Biswas ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
Deposition Technique ◽  
Fabrication And Characterization

Quality characterization of dissimilar laser welded joints of Ti6Al4V with AISI 304 by using copper deposition technique

2020 ◽  
Vol 106 (9-10) ◽  
pp. 4577-4591
Author(s):  
Suman Chatterjee ◽  
Sushanta Kumar Sahoo ◽  
B. Swain ◽  
Siba Sankar Mahapatra ◽  
Tarapada Roy
Keyword(s):  
Welded Joints ◽  
Copper Deposition ◽  
Deposition Technique ◽  
Aisi 304

Preparation and Characterization of Platinum/Ceria-based Catalysts for Methanol Electro-oxidation in Alkaline Medium

2012 ◽  
Vol 1446 ◽  
Author(s):  
Christian L. Menéndez ◽  
Ana-Rita Mayol ◽  
Carlos R. Cabrera
Keyword(s):  
Particle Size ◽  
Cyclic Voltammetry ◽  
Cerium Oxide ◽  
Alkaline Medium ◽  
Glassy Carbon ◽  
Composite Electrodes ◽  
Deposition Technique ◽  
Electro Oxidation

ABSTRACTPlatinum/Cerium oxide-based catalysts for methanol electro oxidation were prepared by the occlusion deposition technique. Composite glassy carbon (GC) electrodes were modified and then tested towards the methanol electro oxidation half reaction in acid and alkaline medium. Cyclic voltammetry and chronoamperometry techniques were used to test the catalytic response of the composite electrodes. AFM studies were carried out in order to have a measurement of the particle size and distribution of the platinum/ceria catalyst on HOPG.

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