GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

1993 ◽  
Vol 298 ◽  
Author(s):  
Gang He ◽  
Mark D. Savellano ◽  
Harry A. Atwater
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Pure Silicon ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Molecular Beam Deposition ◽  
Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

Growth and Characterization of Heteroepitaxial GaAs on Semiconductor-on-Insulator and Insulating Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
T.P. Humphreys ◽  
K. Das ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
R.J. Nemanich ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Epitaxy ◽  
Molecular Beam Epitaxial ◽  
Chemical Vapor Deposited ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth ◽  
Crystallographic Orientations

AbstractA systematic study pertaining to the molecular beam epitaxial growth and charac- terization of GaAs films on various crystallographic orientations of sapphire is presented. For integration with silicon circuitry, heteroepitaxial GaAs layers have also been grown on commercially-available chemical vapor deposited silicon-on-sapphire (SOS) and SOS substrates that have been upgraded by the double solid-phase epitaxy process.

Direct-Gap Photoluminescence from a Si-Ge Multilayer Super Unit Cell Grown on Si0.4Ge0.6

2018 ◽  
Author(s):  
David J. Lockwood ◽  
N.L. Rowell ◽  
L. Favre ◽  
A. Ronda ◽  
I. Berbezier
Keyword(s):  
Molecular Beam ◽  
Light Emission ◽  
Solid Phase ◽  
Unit Cell ◽  
Emission Lines ◽  
Solid Phase Epitaxy ◽  
Light Emitters ◽  
Band Gap Engineering ◽  
Optical Fiber Applications ◽  
Weak Peak

Both Si and Ge possess indirect band gaps, which makes them very inefficient light emitters. One way to overcome this limitation is through band gap engineering. In this regard, M. d’Avezac et al. [Phys. Rev. Lett., 108, 027401 (2012)] predicted that a strained SiGe2Si2Ge2SiGen super unit cell on Si0.4Ge0.6 would have a direct and dipole-allowed gap of 0.863 eV, which is ideally suited for optical fiber applications. Here we report on the epitaxial growth of such a structure and its optical properties, for which purpose two similar samples were prepared by molecular beam epitaxy and solid phase epitaxy. Photoluminescence (PL) spectra were obtained at low temperatures (6–25 K) with excitation at wavelengths of 405 and 458 nm, selected to emphasize the light emission from the sample superstructure. A strong low-energy PL quadruplet is seen, with peaks near 727, 758, 792 and 822 meV at 6 K, together with a much weaker peak at 871 MeV. The ratio of intensities of the strong and weak peaks is the same in both samples. The weak peak at 871 meV is assigned to the dipole-allowed direct-gap transition associated with the super unit cell. The four strong peaks are attributed to dislocation related emission lines of the thick relaxed Si0.4Ge0.6 transition layer on Si.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Structure of Iron Silicide film on Si(111) Grown by Solid-Phase Epitaxy and Reactive Deposition Epitaxy

2006 ◽  
Vol 45 (3B) ◽  
pp. 2390-2394 ◽  
Author(s):  
Masuaki Matsumoto ◽  
Kaoru Sugie ◽  
Taizou Kawauchi ◽  
Katsuyuki Fukutani ◽  
Tatsuo Okano
Keyword(s):  
Solid Phase ◽  
Iron Silicide ◽  
Solid Phase Epitaxy ◽  
Silicide Film ◽  
Reactive Deposition

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

Heteroepitaxial Growth of Strontium Titanate on Lanthanum Aluminate Using the Metallo-Organic Decomposition Technique.

1993 ◽  
Vol 317 ◽  
Author(s):  
Gabriel Braunstein ◽  
Gustavo R. Paz-Pujalt ◽  
James F. Elman
Keyword(s):  
Solid Phase ◽  
Precursor Solution ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Potential Influence ◽  
Ion Channeling ◽  
Random Nucleation ◽  
Lanthanum Aluminate ◽  
Organic Precursors ◽  
Organic Decomposition

ABSTRACTWe demonstrate the heteroepitaxial growth of thin films of SrTiO3 prepared by the method of Metallo-organic decomposition on LaAlO3 substrates. The SrTiO3 films are prepared by spin coating and thermal decomposition of a solution of Metallo-organic precursors on single-crystal, <100> oriented, LaAK>3 substrates. Subsequent heat treatment at 1100 – 1200 °C for 1 h results in the epitaxial alignment of the SrTiO3 films with respect to the LaAlO3 substrate.The degree of alignment of the films appears to depend on their thickness, with thinner films showing better alignment (as determined by ion-channeling measurements). This behavior is interpreted as a result of the competition between solid-phase epitaxy and random nucleation, observed during the crystallization of films prepared by Metallo-organic decomposition. However, since thinner films have been prepared by dilution of the precursor solution, there is also the possibility that the concentration of the precursor solution may influence the crystallization behavior of the films.The potential influence of the precursor formulation on the crystallization mechanism is discussed.

Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
J.H. Kim ◽  
S. Sakai ◽  
J.K. Liu ◽  
G. Raohakrishnan ◽  
S.S. Chang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Light Emitting ◽  
Si Substrates ◽  
Molecular Beam Epitaxial

ABSTRACTWe first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layers on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100) Sisubstrates misoriented 4 toward [110] direction. The MEMBE growth method isdescribed and material properties are compared with those of normal two-step MBE-grown or in-situ annealed layers. Micrographs of cross-sectional view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 107 cm-2 over ten times lower than those of two-step MBE-grown or in-situ annealedlayers. AlGaAs/GaAs double heterostructure lasers and light-emitting diodeshave been successfully grown on MEMBE GaAs/Si by both metal organic chemical vapor deposition and liquid phase epitaxy. MOCVD-grown lasers showed peak output power as high as 184 mW/facet, pulsed threshold currents as low as150 mA at 300 K, and differential quantum efficiencies of up to 30 %. The LPE-grown light-emitting diodes showed output powers of 1.5 mW and external quantum efficiencies of 3.3 mW/A per facet.

Sign in / Sign up

Export Citation Format

Share Document