Growth and optical studies of a GaAs epitaxial layer on porous Si(100) grown by molecular beam epitaxy

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

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Optical studies of alloy semiconductors Ge 1-x Cx (x < 0.05) grown on Si substrates by combined low-energy ion beam and molecular beam epitaxy

Springer Proceedings in Physics - Proceedings of the 25th International Conference on the Physics of Semiconductors Part I ◽

10.1007/978-3-642-59484-7_50 ◽

2001 ◽

pp. 119-120

Author(s):

M. Sakai ◽

Y. Kitayama ◽

S. Takaku ◽

S. Kimura ◽

H. Shibata

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Beam ◽

Low Energy ◽

Optical Studies ◽

Si Substrates ◽

Alloy Semiconductors

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Ion-cut of Si facilitated by interfacial defects of Si substrate/epitaxial layer grown by molecular-beam epitaxy

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2005.08.192 ◽

2006 ◽

Vol 242 (1-2) ◽

pp. 509-511 ◽

Cited By ~ 1

Author(s):

Lin Shao ◽

J.K. Lee ◽

T. Höchbauer ◽

M. Nastasi ◽

Phillip E. Thompson ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Layer ◽

Molecular Beam ◽

Si Substrate ◽

Interfacial Defects

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Growth of Germanium on Porous Silicon (001)

MRS Proceedings ◽

10.1557/proc-452-255 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 3

Author(s):

W. H. Thompson ◽

Z. Yamani ◽

H. M. Nayfeh ◽

M.-A. Hasan ◽

J. E. Greene ◽

...

Keyword(s):

Surface Roughness ◽

Atomic Force Microscopy ◽

Porous Silicon ◽

Molecular Beam Epitaxy ◽

Surface Morphology ◽

Molecular Beam ◽

Porous Si ◽

Force Microscopy ◽

Atomic Force ◽

Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

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Oxidation of Strained Si-Ge Layers Grown by MBE

MRS Proceedings ◽

10.1557/proc-102-295 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 30

Author(s):

G.L. Patton ◽

S.S. Iyer ◽

S.L. Delage ◽

E. Ganin ◽

R.C. Mcintosh

Keyword(s):

Growth Rate ◽

Molecular Beam Epitaxy ◽

Epitaxial Layer ◽

Molecular Beam ◽

Fast Growth ◽

Strained Si ◽

Substrate Interface ◽

Growth Regime ◽

Oxide Substrate ◽

Strained Sige

ABSTRACTThe oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.

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