Kinetics of the formation of concentrational transitions between epitaxial layers of silicon in the process of growth from a molecular beam

1982 ◽  
Vol 25 (11) ◽  
pp. 983-985
Author(s):  
M. I. Obsyannikov ◽  
R. G. Loginova ◽  
S. D. Tsarevskii
Keyword(s):  
Molecular Beam ◽  
Epitaxial Layers ◽  
Kinetics Of

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Growth Kinetics of Molecular Beam Epitaxy on Non-Singular Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
J. F. Egler ◽  
N. Otsuka ◽  
K. Mahalingam
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Singular Surface ◽  
Sticking Coefficient ◽  
Singular Surfaces ◽  
Vicinal Surfaces ◽  
Kinetics Of ◽  
Multiple Configurations

ABSTRACTGrowth kinetics on non-singular surfaces were studied by Monte Carlo simulations. In contrast to the growth on singular and vicinal surfaces, the sticking coefficient on the non-singular surfaces was found to decrease with increase of the surface roughness. Simulations of annealing processes showed that surface diffusion of atoms leads to a stationary surface roughness, which is explained by multiple configurations having the lowest energy in the non-singular surface.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers

1995 ◽  
Vol 24 (9) ◽  
pp. 1211-1218 ◽  
Author(s):  
P. S. Wijewarnasuriya ◽  
M. D. Langer ◽  
S. Sivananthan ◽  
J. P. Faurie
Keyword(s):  
Molecular Beam ◽  
Epitaxial Layers

A molecular beam study of desorption kinetics of GeO from Ge(111) surfaces

1993 ◽  
Vol 283 (1-3) ◽  
pp. 64-69 ◽  
Author(s):  
Kouichi Sugiyama ◽  
Yoshiyuki Igari ◽  
Isao Kusunoki
Keyword(s):  
Molecular Beam ◽  
Desorption Kinetics ◽  
Kinetics Of

Molecular Beam Studies of the Kinetics of the Thermal Conversion of N2O on Rh(111) Single-Crystal Surfaces

2004 ◽  
Vol 108 (48) ◽  
pp. 18683-18692 ◽  
Author(s):  
S. Wehner ◽  
M. T. Paffett ◽  
F. Zaera
Keyword(s):  
Single Crystal ◽  
Molecular Beam ◽  
Thermal Conversion ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Kinetics Of

RIPPLED SURFACE TOPOGRAPHY OBSERVED ON SILICON MOLECULAR BEAM EPITAXIAL AND VAPOUR PHASE EPITAXIAL LAYERS

1989 ◽  
pp. 255-262
Author(s):  
A.J. PIDDUCK ◽  
D.J. ROBBINS ◽  
I.M. YOUNG ◽  
G. PATEL
Keyword(s):  
Surface Topography ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Molecular Beam Epitaxial

Nitrogen-Passivation Effects of Si Substrates on Properties of ZnO Epitaxial Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

2010 ◽  
Vol 56 (3) ◽  
pp. 827-831 ◽  
Author(s):  
Jae-Young Leem ◽  
Min Su Kim ◽  
Ghun Sik Kim ◽  
Min Young Cho ◽  
Do Yeob Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Si Substrates
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