Nitrogen-Passivation Effects of Si Substrates on Properties of ZnO Epitaxial Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

AbstractGraded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

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Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

Nanotechnology ◽

10.1088/1361-6528/abe2c7 ◽

2021 ◽

Vol 32 (19) ◽

pp. 195601

Author(s):

Ž Gačević ◽

J Grandal ◽

Q Guo ◽

R Kirste ◽

M Varela ◽

...

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Structural And Optical Properties ◽

Si Substrates ◽

Self Assembled

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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

MRS Proceedings ◽

10.1557/proc-595-f99w11.65 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

U. Hömmerich ◽

J. T. Seo ◽

J. D. MacKenzie ◽

C. R. Abernathy ◽

R. Birkhahn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Excited States ◽

Room Temperature ◽

Molecular Beam ◽

Average Lifetime ◽

Green Luminescence ◽

Si Substrates ◽

Lifetime Analysis ◽

Metalorganic Molecular Beam Epitaxy ◽

Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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