Mass-Spectrometry Investigation of the Kinetics of the Molecular-Beam Epitaxy of CdTe

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

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In situ composition control of III-As1 − xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometry

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00781-6 ◽

1997 ◽

Vol 173 (1-2) ◽

pp. 5-13 ◽

Cited By ~ 18

Author(s):

R. Kaspi ◽

W.T. Cooley ◽

K.R. Evans

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Line Of Sight ◽

Composition Control

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Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-220-217 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 12

Author(s):

S. Fukatsu ◽

K. Fujita ◽

H. Yaguchi ◽

Y. Shiraki ◽

R. Ito

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Lower Limit ◽

Molecular Beam ◽

Growth Direction ◽

High Concentration ◽

Mbe Growth ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

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Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4 with in situ angle-resolved photoemission spectroscopy

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/aba06d ◽

2020 ◽

Vol 32 (47) ◽

pp. 475002 ◽

Cited By ~ 2

Author(s):

Kejing Zhu ◽

Yunhe Bai ◽

Xiyu Hong ◽

Zuhan Geng ◽

Yuying Jiang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Topological Insulator ◽

Growth Kinetics ◽

Molecular Beam ◽

Photoemission Spectroscopy ◽

Molecular Beam Epitaxy Growth ◽

Angle Resolved Photoemission Spectroscopy ◽

Kinetics Of

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Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) ◽

10.1109/asdam.2000.889476 ◽

2002 ◽

Author(s):

L.K. Orlov ◽

N.L. Ivina ◽

A.V. Potapov ◽

S.V. Ivin

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Surface Processes ◽

Gas Source ◽

Kinetics Of

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Growth of Cubic GAN on (001) GAAS

MRS Proceedings ◽

10.1557/proc-395-27 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 13

Author(s):

O. Brandt ◽

H. Yang ◽

A. Trampert ◽

K. H. Ploog

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Stacking Faults ◽

Desorption Rate ◽

Natural Consequence ◽

Subsequent Growth ◽

Nucleation Stage ◽

Cubic Gan ◽

Kinetics Of ◽

Microscopic Surface

ABSTRACTWe present a study of the growth of cubic GaN films on (001) GaAs by molecular beam epitaxy. Our investigations focus on the nucleation stage as well as on the subsequent growth of GaN. The phenomenon of epitaxial growth at this extreme mismatch (20%) is demonstrated to arise from a coincidence lattice between GaAs and GaN. The presence of a high-density of stacking faults in the GaN layer is explained within this understanding as being a natural consequence of the coalescence of perfectly relaxed nuclei. We furthermore analyze the growth kinetics of GaN via the surface reconstruction transitions observed upon an impinging Ga flux, from which we obtain both the desorption rate of Ga as well as the diffusion coefficient of Ga adatoms on the Ga-stabilized GaN surface. The diffusivity of Ga is found to be very low at the growth temperatures commonly used during molecular beam epitaxy, which provides an explanation for the microscopic surface roughness observed on our samples.

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