Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers

1995 ◽  
Vol 24 (9) ◽  
pp. 1211-1218 ◽  
Author(s):  
P. S. Wijewarnasuriya ◽  
M. D. Langer ◽  
S. Sivananthan ◽  
J. P. Faurie
Keyword(s):  
Molecular Beam ◽  
Epitaxial Layers

RIPPLED SURFACE TOPOGRAPHY OBSERVED ON SILICON MOLECULAR BEAM EPITAXIAL AND VAPOUR PHASE EPITAXIAL LAYERS

1989 ◽  
pp. 255-262
Author(s):  
A.J. PIDDUCK ◽  
D.J. ROBBINS ◽  
I.M. YOUNG ◽  
G. PATEL
Keyword(s):  
Surface Topography ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Molecular Beam Epitaxial

Nitrogen-Passivation Effects of Si Substrates on Properties of ZnO Epitaxial Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

2010 ◽  
Vol 56 (3) ◽  
pp. 827-831 ◽  
Author(s):  
Jae-Young Leem ◽  
Min Su Kim ◽  
Ghun Sik Kim ◽  
Min Young Cho ◽  
Do Yeob Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Si Substrates

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

1989 ◽  
Vol 160 ◽  
Author(s):  
Tetsuroh Minemura ◽  
Junko Asano ◽  
Kazuo Tsutsui ◽  
Seijiro Furukawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Considerable Influence ◽  
Heteroepitaxial Growth ◽  
Remarkable Effect

AbstractHeteroepitaxial growth of CaxSr1-xF2 layers on Si (100) substrates by molecular beam epitaxy has been investigated for GaAs / fluoride / Si structures. The Si (100) substrates off-oriented toward [011] show no considerable influence on crystallinity of CaF2 and SrF2 epitaxial layers. The off - oriented substrates, however, influence a remarkable effect on CaxSr1-xF2 layers, resulting in poor crystallinity rather than good one. This influence of off-oriented Si (100) substrates on the heteroepitaxy of CaxSr1-xF2 layers was the opposite of that found in GaAs/Si (100) structures.

Surface electrical breakdown characteristics of molecular beam epitaxial layers grown at low temperatures

1995 ◽  
Vol 38 (9) ◽  
pp. 1685-1690
Author(s):  
S Shiobara ◽  
K Sasaki ◽  
H Hasegawa
Keyword(s):  
Low Temperatures ◽  
Molecular Beam ◽  
Electrical Breakdown ◽  
Epitaxial Layers ◽  
Molecular Beam Epitaxial

HOPPING MAGNETOTRANSPORT IN THE δ-DOPING LAYER

1994 ◽  
Vol 08 (07) ◽  
pp. 789-800 ◽  
Author(s):  
F. Koch
Keyword(s):  
Molecular Beam Epitaxy ◽  
Magnetic Flux ◽  
Molecular Beam ◽  
Negative Magnetoresistance ◽  
Epitaxial Layers ◽  
Interference Effects ◽  
Hopping Transport ◽  
Coherent Superposition ◽  
Planar Arrays

We review the observations on hopping transport in planar arrays of Si donor atoms in GaAs epitaxial layers grown by molecular beam epitaxy. It is shown that properly designed δ-doping layers permit one to unambigously identify interference effects that result from the coherent superposition of the tunneling amplitudes along alternative paths in the plane. Magnetic flux through the area generated by the paths destroys the interference and leads to negative magnetoresistance. We discuss the observed non-monotonic variation of the resistance.

Kinetics of the formation of concentrational transitions between epitaxial layers of silicon in the process of growth from a molecular beam

1982 ◽  
Vol 25 (11) ◽  
pp. 983-985
Author(s):  
M. I. Obsyannikov ◽  
R. G. Loginova ◽  
S. D. Tsarevskii
Keyword(s):  
Molecular Beam ◽  
Epitaxial Layers ◽  
Kinetics Of

Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy

1979 ◽  
Vol 50 (6) ◽  
pp. 4457-4458 ◽  
Author(s):  
Yuichi Kawamura ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Lattice Deformation ◽  
Inp Substrates

scholarly journals Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

2000 ◽  
Vol 76 (24) ◽  
pp. 3549-3551 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
N. T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy

2000 ◽  
Vol 209 (2-3) ◽  
pp. 415-418 ◽  
Author(s):  
Gabriel Ferro ◽  
Hajime Okumura ◽  
Sadafumi Yoshida
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Epitaxial Layers
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