Combined effect of temperature and pressure on the behavior of long-period ordered structures

1989 ◽  
Vol 32 (12) ◽  
pp. 969-973
Author(s):  
A. I. Potekaev ◽  
L. D. Bynkova
2020 ◽  
Vol 117 ◽  
pp. 107965
Author(s):  
M.Yu. Petrushina ◽  
E.S. Dedova ◽  
K.V. Yusenko ◽  
A.S. Portnyagin ◽  
E.K. Papynov ◽  
...  

Aquaculture ◽  
2002 ◽  
Vol 209 (1-4) ◽  
pp. 307-317 ◽  
Author(s):  
P Lemaire ◽  
E Bernard ◽  
J.A Martinez-Paz ◽  
L Chim

1952 ◽  
Vol 44 (1) ◽  
pp. 211-212 ◽  
Author(s):  
E. J. Bradbury ◽  
Dorothy McNulty ◽  
R. I. Savage ◽  
E. E. McSweeney

1992 ◽  
Vol 276 ◽  
Author(s):  
D-G. Oei ◽  
S. L. McCarthy

ABSTRACTMeasurements of the residual stress in polysilicon films made by Low Pressure Chemical Vapor Deposition (LPCVD) at different deposition pressures and temperatures are reported. The stress behavior of phosphorus (P)-ion implanted/annealed polysilicon films is also reported. Within the temperature range of deposition, 580 °C to 650 °C, the stress vs deposition temperature plot exhibits a transition region in which the stress of the film changes from highly compressive to highly tensile and back to highly compressive as the deposition temperature increases. This behavior was observed in films that were made by the LPCVD process at reduced pressures of 210 and 320 mTORR. At deposition temperatures below 590 °C the deposit is predominantly amorphous, and the film is highly compressive; at temperatures above 610 °C (110) oriented polycrystalline silicon is formed exhibiting high compressive residual stress.


Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8803-8810 ◽  
Author(s):  
Ya. Grosu ◽  
G. Renaudin ◽  
V. Eroshenko ◽  
J.-M. Nedelec ◽  
J.-P. E. Grolier

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