The Effect of Temperature and Pressure on Residual Stress in LPCVD Polysilicon Films

1992 ◽  
Vol 276 ◽  
Author(s):  
D-G. Oei ◽  
S. L. McCarthy
Keyword(s):  
Residual Stress ◽  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
Oriented Polycrystalline ◽  
Temperature And Pressure ◽  
Reduced Pressures

ABSTRACTMeasurements of the residual stress in polysilicon films made by Low Pressure Chemical Vapor Deposition (LPCVD) at different deposition pressures and temperatures are reported. The stress behavior of phosphorus (P)-ion implanted/annealed polysilicon films is also reported. Within the temperature range of deposition, 580 °C to 650 °C, the stress vs deposition temperature plot exhibits a transition region in which the stress of the film changes from highly compressive to highly tensile and back to highly compressive as the deposition temperature increases. This behavior was observed in films that were made by the LPCVD process at reduced pressures of 210 and 320 mTORR. At deposition temperatures below 590 °C the deposit is predominantly amorphous, and the film is highly compressive; at temperatures above 610 °C (110) oriented polycrystalline silicon is formed exhibiting high compressive residual stress.

Polycrystalline Silicon Gettering Layers with Controlled Residual Stress

2013 ◽  
Vol 205-206 ◽  
pp. 284-289 ◽  
Author(s):  
David Lysáček ◽  
Petr Kostelník ◽  
Petr Pánek
Keyword(s):  
Residual Stress ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Opposite Sign ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Novel Method ◽  
The Individual ◽  
Scanning Electron

We report on a novel method of low pressure chemical vapor deposition of polycrystalline silicon layers used for external gettering in silicon substrate for semiconductor applications. The proposed method allowed us to produce layers of polycrystalline silicon with pre-determined residual stress. The method is based on the deposition of a multilayer system formed by two layers. The first layer is intentionally designed to have tensile stress while the second layer has compressive stress. Opposite sign of the residual stresses of the individual layers enables to pre-determine the residual stress of the gettering stack. We used scanning electron microscopy for structural characterization of the layers and intentional contamination for demonstration of the gettering properties. Residual stress of the layers was calculated from the wafer curvature.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 311-314 ◽  
Author(s):  
Xiao An Fu ◽  
Jacob Trevino ◽  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Sic Films

This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02 -cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.

Xrd and Xtem Investigation of Polycrystalline Silicon Carbide on Polycrystalline Silicon

1996 ◽  
Vol 444 ◽  
Author(s):  
S. Roy ◽  
C. A. Zorman ◽  
C. H. Wu ◽  
A. J. Fleischman ◽  
M. Mehregany
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Before And After ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
Sic Films

AbstractAtmospheric pressure chemical vapor deposition (APCVD) was used to grow silicon carbide (SiC) on as-deposited and annealed polycrystalline silicon (polysilicon) films which were deposited on oxidized Si wafers. X-ray diffraction (XRD) reveals that SiC films grown on asdeposited polysilicon have a (110) orientation. XRD performed on as-deposited polysilicon before and after SiC growth reveals that the orientation of polysilicon changes from (110) to a mixture of (110) and (11) during growth of 2 μm-thick SiC films. Cross-sectional transmission electron microscopy (XTEM) images of the SiC/polysilicon interface show that the SiC appears to be unaffected by the recrystallization of the underlying polysilicon during the SiC growth. XRD from samples of SiC grown on annealed polysilicon show that both films have (110) and (111) orientations. For SiC films grown on annealed polysilicon substrates, XTEM images show that the crystallinity of the annealed polysilicon substrate does not significantly change during SiC growth. Furthermore, an investigation of the SiC/annealed-polysilicon interface using selected area diffraction (SAD) shows that an epitaxial relationship exists between the polysilicon and SiC grains.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Variable Angle Spectroscopic Ellipsometric Characterization of Polycrystalline Silicon thin Film Multilayer Structures

1991 ◽  
Vol 238 ◽  
Author(s):  
Paul G. Snyder ◽  
Yi-Ming Xiong ◽  
John A. Woollam ◽  
Eric R. Krosche
Keyword(s):  
Polycrystalline Silicon ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Additional Information ◽  
Variable Angle ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Annealing Effects

ABSTRACTVariable angle spectroscopie ellipsometry (VASE), a nondestructive optical technique, was used to characterize two different multilayer samples, each having a low-pressure chemical vapor deposited polycrystalline silicon (poly-Si) layer. Analysis of these samples by cross-sectional transmission electron microscopy (XTEM) revealed large changes in grain size, between the undoped, as-deposited, and doped, annealed poly-Si layers. Roughness at the top of the poly-Si layers was also observed by XTEM. These features, together with the other structure parameters (thickness and composition), were analyzed ellipsometrically by fitting the measured VASE spectra with appropriate multilayer models. Each composite layer (surface overlayer, interfacial layer, and poly-Si layer) was modeled as a physical mixture, using the Bruggeman effective medium approximation. The ellipsometrically determined thicknesses were in very good agreement with the corresponding results measured by XTEM. Furthermore, VASE analysis provided additional information about the relative fractions of the constituent materials in the different composite layers. Thus, it quantitatively characterized the surface and interracial properties, and also the doping and annealing effects on the microstructure of poly-Si layers.

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