Ion implantation of58Co for positron-annihilation Doppler-broadening measurements

1981 ◽  
Vol 24 (1) ◽  
pp. 67-69 ◽  
Author(s):  
M. J. Fluss ◽  
M. K. Chason ◽  
J. L. Lerner ◽  
D. G. Legnini ◽  
L. C. Smedskjaer
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Doppler Broadening

Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Low Dose ◽  
Positron Beam ◽  
Doppler Broadening ◽  
Positron Energy ◽  
P Type ◽  
Incident Positron ◽  
Depth Distributions

ABSTRACTVacancy-type defects in 60-keV Be+-implanted GaAs and InP were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects and pre-existed interstitial-type defects in p-type GaAs. The defects induced by ion implantation in InP were also studied.

Annihilation Lifetime Spectroscopy Using Positrons from Bremsstrahlung Production

2012 ◽  
Vol 331 ◽  
pp. 41-52 ◽  
Author(s):  
Andreas Wagner ◽  
Wolfgang Anwand ◽  
Maik Butterling ◽  
Thomas E. Cowan ◽  
Fine Fiedler ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Linear Accelerator ◽  
Electron Accelerator ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Electron Linear Accelerator ◽  
Positron Annihilation Lifetime ◽  
Electron Bremsstrahlung ◽  
New Type ◽  
Set Up

A new type of a positron annihilation lifetime spectroscopy (PALS) system has been set up at the superconducting electron accelerator ELBE [ at Helmholtz-Zentrum Dresden-Rossendorf. In contrast to existing source-based PALS systems, the approach described here makes use of an intense photon beam from electron bremsstrahlung which converts through pair production into positrons inside the sample under study. The article focusses on the production of intense bremsstrahlung using a superconducting electron linear accelerator, the production of positrons inside the sample under study, the efficient detector setup which allows for annihilation lifetime and Doppler-broadening spectroscopy simultaneously. Selected examples of positron annihilation spectroscopy are presented.

scholarly journals Calculation of the Doppler broadening of the electron-positron annihilation radiation in defect-free bulk materials

2000 ◽  
Vol 61 (15) ◽  
pp. 10092-10099 ◽  
Author(s):  
V. J. Ghosh ◽  
M. Alatalo ◽  
P. Asoka-Kumar ◽  
B. Nielsen ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Bulk Materials ◽  
Electron Positron Annihilation ◽  
Electron Positron

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

The Evolution Behavior of Defects in the Nanofilms of W/Cu and W Probed by Doppler Broadening Positron Annihilation Spectroscopy

2017 ◽  
Vol 373 ◽  
pp. 104-107
Author(s):  
Ling Wang ◽  
Ai Hong Deng ◽  
Kang Wang ◽  
Yong Wang ◽  
Xiao Bo Lu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Storage Time ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Radio Frequency Magnetron Sputtering ◽  
Helium Ions ◽  
Near Surface ◽  
Evolution Behavior

W/Cu multilayer nanofilms and pure W nanofilms were prepared in pure Ar and He/Ar mixing atmosphere by radio frequency magnetron sputtering method. The defect evolution of the samples was characterized by Doppler broadening positron annihilation spectroscopy (DB-PAS).The results show that plenty of defects can be produced by introducing helium (He) into W/Cu multilayer nanofilms. With the natural storage time increasing, the helium located in the near surface of W/Cu multilayer nanofilm would be released gradually and induce the coalescence of the helium related defects due to the diffusion of the helium and defects. In addition, the pure W nanofilms were irradiated by 30 keV helium ions and 40 keV hydrogen (H) ions in sequence at room temperature. From the DB-PAS analysis, it can be shown that a large number of vacancy-type defects are produced due to the He and/or H irradiation. H ions would be trapped by He related defects and produced He-H-V complexes.

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