Growth rate studies of CVD diamond in an RF plasma torch

1994 ◽  
Vol 14 (4) ◽  
pp. 383-406 ◽  
Author(s):  
S. K. Baldwin ◽  
T. G. Owano ◽  
C. H. Kruger
Keyword(s):  
Growth Rate ◽  
Plasma Torch ◽  
Cvd Diamond ◽  
Rf Plasma

The impact of gas isotopic exchange on the growth rate and hydrogen (deuterium) bonding within CVD diamond films

2007 ◽  
Vol 204 (9) ◽  
pp. 2839-2846 ◽  
Author(s):  
O. Ternyak ◽  
Sh. Michaelson ◽  
L. Tkach ◽  
R. Akhvlediani ◽  
A. Hoffman
Keyword(s):  
Growth Rate ◽  
Isotopic Exchange ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Hydrogen Deuterium ◽  
The Impact

The Formation and Behavior of Particles in Silane Discharges

1999 ◽  
Vol 557 ◽  
Author(s):  
Alan Gallagher
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Particle Density ◽  
Plasma Chemistry ◽  
Particle Growth ◽  
Rf Plasma ◽  
Electrode Gap ◽  
Plasma Parameters ◽  
Rf Discharges ◽  
And Behavior

AbstractParticle growth in silane RF discharges, and the incorporation of particles into hydrogenated-amorphous-silicon (a-Si:H) devices is described. These particles have a structure similar to a-Si:H, but their incorporation into the device is believed to yield harmful voids and interfaces. Measurements of particle density and growth in a silane RF plasma, for particle diameters of 8-50 nm, are described. This particle growth rate is very rapid, and decreases in density during the growth indicate a major flux of these size particles to the substrate. Particle densities are a very strong function of pressure, film growth rate and electrode gap, increasing orders of magnitude for small increases in each parameter. A full plasma- chemistry model for particle growth from SiHm radicals and ions has been developed, and is outlined. It yields particle densities and growth rates, as a function of plasma parameters, which are in qualitative agreement with the data. It also indicates that, in addition to the diameter >2 nm particles that have been observed in films, a very large flux of SixH,, molecular radicals with × >1 also incorporate into the film. It appears that these large radicals yield more than 1% of the film for typical device-deposition conditions, so this may have a serious effect on device properties.

Comparative Study on in-situ Ellipsometric Monitoring of III-Nitride Film Growth via Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940020
Author(s):  
Adnan Mohammad ◽  
Deepa Shukla ◽  
Saidjafarzoda Ilhom ◽  
Brian Willis ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Rf Plasma ◽  
Nitride Film ◽  
The Impact

In this paper a comparative in-situ ellipsometric analysis is carried out on plasma-assisted ALD-grown III-nitride (AlN, GaN, and InN) films. The precursors used are TMA, TMG, and TMI for AlN, GaN, and InN respectively, while Ar is used as purge gas. For all of the films N2/H2/Ar plasma was used as the co-reactant. The work includes real-time in-situ monitored saturation curves, unit ALD cycle analysis, and >500 cycle film growth runs. In addition, the films are grown at different substrate temperatures to observe the impact of temperature not only on the growth rate but on how it influenced the precursor chemisorption, ligand removal, and nitrogen incorporation surface reactions. All three nitride films confirm fairly linear growth character. The growth rate per cycle (GPC) for each film is also measured with respect to rf-plasma power to obtain the surface saturation conditions during ALD growth. The real-time in-situ monitoring of the film growth can really be beneficial to understand the atomic layer growth and film formation in each individual ALD cycle.

The Role of Heavy Hydrocarbons in Cvd Diamond Growth

1992 ◽  
Vol 270 ◽  
Author(s):  
Ching-Hsong Wu ◽  
T. J. Potter ◽  
M. A. Tamor
Keyword(s):  
Growth Rate ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Spectrometric Analysis ◽  
Heavy Hydrocarbons ◽  
Hot Filament Cvd ◽  
Hot Filament ◽  
Deposition Conditions

ABSTRACTA mass spectrometric analysis of heavy hydrocarbons (HHCs) during hot-filament CVD diamond growth was performed together with in situ monitoring of the growth rate. Many HHCs were detected and tentatively identified. Of all HHCs studied, only diacetylene shows good correlation with the diamond growth rate under various deposition conditions. Its possible role is discussed.

Better control over the onset of microcrystallinity in fast-growing silicon network

2004 ◽  
Vol 19 (9) ◽  
pp. 2597-2603 ◽  
Author(s):  
Sumita Mukhopadhyay ◽  
Debajyoti Das ◽  
Swati Ray
Keyword(s):  
Growth Rate ◽  
High Pressure ◽  
Deposition Rate ◽  
Film Growth ◽  
Electrical Power ◽  
Rf Plasma ◽  
High Deposition Rate ◽  
Deposition Parameter ◽  
Fast Growing ◽  
Film Growth Rate

In view of obtaining a Si:H network at the onset of microcrystallinity at a high deposition rate, we have adopted an intelligent approach to find out a tricky plasma condition in radio frequency (rf) plasma-enhanced chemical vapordeposition that provides a better control on growth introducing retarded microcrystallization. The deposition parameter includes a combination of high electrical power applied to the (SiH4+H2)-plasma and high gas pressure in thereaction chamber. High rf power increases the number density of film-forming precursors as well as atomic H density in the plasma, which helps to increase thefilm deposition rate and to promote microcrystallinity, respectively. In addition,high pressure helps not only to increase the film-growth rate by producing a dense plasma but also retards the microcrystallization process by increasing significantlythe gas phase collision frequency and consequently reducing the effective reactivityof atomic H on the surface of a fast-growing Si:H network. A combination of high-power and high-pressure plasma conditions provides a reasonably wide rangeof H2 dilution to work with and better control in producing a Si:H network at theonset of microcrystallinity, while increasing the film-growth rate.

Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regime

2008 ◽  
Vol 205 (9) ◽  
pp. 2114-2120 ◽  
Author(s):  
O. Brinza ◽  
J. Achard ◽  
F. Silva ◽  
X. Bonnin ◽  
P. Barroy ◽  
...  
Keyword(s):  
Growth Rate ◽  
Power Density ◽  
Process Parameters ◽  
Microwave Power ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Substrate Orientation ◽  
Density Regime
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