Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system

1994 ◽  
Vol 23 (12) ◽  
pp. 1343-1347 ◽  
Author(s):  
Y. Haddab ◽  
M. A. Py ◽  
H. -J. Bühlmann ◽  
M. Ilegems
Keyword(s):  
Fourier Transform ◽  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Deep Level ◽  
Dx Centers ◽  
Effect Transistor ◽  
Spectroscopy System ◽  
Transient Spectroscopy

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 436-439 ◽  
Author(s):  
Sebastian Roensch ◽  
Stefan Hertel ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Drain Current ◽  
Evaluation Procedure ◽  
Defect Centers ◽  
Effect Transistor ◽  
Transient Spectroscopy

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.

EL2 and gallium antisite defects in GaAs: Si

1989 ◽  
Vol 67 (4) ◽  
pp. 375-378 ◽  
Author(s):  
C. K. Teh ◽  
F. L. Weichman ◽  
C. C. Tin ◽  
P. A. Barnes
Keyword(s):  
Fourier Transform ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Fourier Transform Infrared ◽  
Antisite Defect ◽  
Longitudinal Optic ◽  
Related Defect ◽  
Antisite Defects ◽  
Transient Spectroscopy ◽  
Silicon Doped

Photoluminescence (PL), Fourier-transform infrared (FTIR), and deep-level transient spectroscopy (DLTS) measurements have been made on various samples of silicon-doped liquid-encapsulated Czochralski-grown GaAs. All the samples show prominent PL peaks at 1.443 and 1.325 eV together with their longitudinal optic (LO) phonon peaks. The PL peak at 1.443 eV has been reported in the literature as being due to either GaAs or a boron-related defect. The FTIR results show the presence of BGa at 540.3 and 517.0 cm−1 and SiGa at 383.6 cm−1. We have observed that there is no correlation between the PL peak at 1.443 eV and BGa. Thus, we believe that this PL peak is related to the GaAs antisite defect. The presence of EL2 in the samples has been measured using DLTS. We have found that the intensity of the PL peak at 1.443 eV varies inversely with that of the EL2 peak. This relationship indirectly confirms that the 1.443 eV peak is due to the gallium antisite defect. The PL peak at 1.325 eV is significantly different from those reported in the literature for GaAs:Si. Measurements have also been made on samples of GaAs:Si annealed under different arsenic overpressures.

Development of Computer Controlled Deep Level Transient Spectroscopy System

1998 ◽  
Vol 15 (1-2) ◽  
pp. 105-110
Author(s):  
P N Reddy ◽  
B P N Reddy ◽  
S V Pandurangaiah ◽  
K S Chari
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Computer Controlled ◽  
Spectroscopy System ◽  
Transient Spectroscopy

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

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