scholarly journals Determination of energy levels of surface states in GaAs metal–semiconductor field-effect transistor using deep-level transient spectroscopy

1999 ◽  
Vol 74 (8) ◽  
pp. 1108-1110 ◽  
Author(s):  
Kyoung Jin Choi ◽  
Jong-Lam Lee
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Deep Level ◽  
Energy Levels ◽  
Surface States ◽  
Effect Transistor ◽  
Transient Spectroscopy

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 436-439 ◽  
Author(s):  
Sebastian Roensch ◽  
Stefan Hertel ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Drain Current ◽  
Evaluation Procedure ◽  
Defect Centers ◽  
Effect Transistor ◽  
Transient Spectroscopy

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.

scholarly journals Resolving ambiguities in nanowire field-effect transistor characterization

Nanoscale ◽  
2015 ◽  
Vol 7 (43) ◽  
pp. 18188-18197 ◽  
Author(s):  
Sebastian Heedt ◽  
Isabel Otto ◽  
Kamil Sladek ◽  
Hilde Hardtdegen ◽  
Jürgen Schubert ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Evaluation Method ◽  
Surface States ◽  
Profound Impact ◽  
Nanowire Surface ◽  
Dual Gate ◽  
Effect Transistor

The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.

On the methodology of the determination of charge concentration dependent mobility from organic field-effect transistor characteristics

2018 ◽  
Vol 20 (4) ◽  
pp. 2308-2319 ◽  
Author(s):  
Miroslav Menšík ◽  
Petr Toman ◽  
Urszula Bielecka ◽  
Wojciech Bartkowiak ◽  
Jiří Pfleger ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Semiconducting Polymers ◽  
Organic Field Effect Transistor ◽  
Energy Disorder ◽  
Charge Concentration ◽  
Effect Transistor

We developed a new methodology for determining charge concentration dependent mobility from organic field-effect transistor characteristics, applicable for semiconducting polymers with structural and energy disorder.

THERMAL CURRENTS FROM UNDOPED SEMI-INSULATING GaAs MONITORED BY CHARGE DEEP-LEVEL TRANSIENT SPECTROSCOPY

1995 ◽  
Vol 09 (23) ◽  
pp. 3099-3114
Author(s):  
I. THURZO ◽  
K. GMUCOVÁ ◽  
F. DUBECKÝ ◽  
J. DARMO
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Energy Levels ◽  
Thermally Stimulated Currents ◽  
Metal Semiconductor Metal ◽  
Transient Spectroscopy ◽  
Electrical Bias

Metal-semiconductor-metal (MSM) devices prepared from crystalline undoped semi-insulating GaAs were investigated by charge deep-level transient spectroscopy (QDLTS), while exciting the devices by electrical bias pulses in dark. Unlike current concepts of the QDLTS response, thermally stimulated currents were integrated from devices with GaAs crystals thinned down to or below 200 µm and equipped with Au electrodes. Au-GaAs-Au structures on 230 µm thick crystals exhibited standard QDLTS response on either cooling or heating between 100 K and 250 K. It is concluded that a macroscopic space charge region of width ≈10−7 m is formed at the Au/GaAs interface, as the dominant energy levels became ionized. Obtained results on the peaks of the thermally stimulated charge were correlated with those of potentially identical peaks observed via optical admittance transient spectroscopy (OATS).

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