Intermetallic compound layer growth by solid state reactions between 58Bi-42Sn solder and copper

1995 ◽  
Vol 24 (10) ◽  
pp. 1493-1505 ◽  
Author(s):  
P. T. Vianco ◽  
A. C. Kilgo ◽  
R. Grant
Keyword(s):  
Solid State ◽  
Intermetallic Compound ◽  
Compound Layer ◽  
Layer Growth ◽  
Solid State Reactions ◽  
Intermetallic Compound Layer

Growth Kinetics of Intermetallic Compound and Interfacial Reactions in Pb-Free Flip Chip Solder Bump during Solid State Isothermal Aging

2005 ◽  
Vol 486-487 ◽  
pp. 273-276
Author(s):  
Dae Gon Kim ◽  
Hyung Sun Jang ◽  
Young Jig Kim ◽  
Seung Boo Jung
Keyword(s):  
Solid State ◽  
Intermetallic Compound ◽  
Growth Kinetics ◽  
Isothermal Aging ◽  
Flip Chip ◽  
Compound Layer ◽  
Layer Growth ◽  
Intermetallic Compound Layer ◽  
Temperature Range ◽  
Kinetics Of

In the present work, the growth kinetics of intermetallic compound layer formed in Sn-3.5Ag flip chip solder joints by solid-state isothermal aging was examined at temperatures between 80 and 150 °C for 0 to 60 days. The bumping for the flip chip devices was performed using an electroless under bump metallization. The quantitative analyses were performed on the intermetallic compound layer thickness as a function of aging time and aging temperature. The layer growth of the Ni3Sn4 intermetallic compound followed a parabolic law within a given temperature range. As a whole, because the value of the time exponent (n) is approximately equal to 0.5, the layer growth of the intermetallic compound was mainly controlled by diffusion mechanism in the temperature range studied. The apparent activation energy of the Ni3Sn4 intermetallic was 49.63 kJ/mol.

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