Microstructure Evolution and Shear Strength of Tin-Indium-xCu/Cu Joints

The low melting temperature In-48Sn alloy is a promising candidate for flexible devices. However, the joint strength of the In-48Sn alloy on the Cu substrate was low due to the rapid diffusion of Cu into the In-rich alloy. In this study, the effect of the addition of xCu (x = 2.0 and 8.0 wt.%) on wettability, interfacial reaction, and mechanical strength of the In-Sn-xCu/Cu joint is analyzed. The results demonstrate that both the In-48Sn and In-Sn-xCu alloys exhibit good wettability on the Cu substrate and that the contact angle increases with an increase in the Cu content. Furthermore, fine grains are observed in the alloy matrix of the In-Sn-xCu/Cu joint and the interfacial intermetallic compound (IMC) comprising the Cu-rich Cu6(In,Sn)5 near the Cu substrate and the Cu-deficient Cu(In,Sn)2 near the solder side. The In-Sn-2.0Cu/Cu joint with fine microstructure and a small amount of IMC in the alloy matrix shows the highest average shear strength of 16.5 MPa. Although the In-Sn-8.0Cu/Cu joint also exhibits fine grains, the presence of large number of voids and rough interfacial IMC layer causes the formation of additional stress concentration points, thereby reducing the average shear strength of the joint.

A flexible thermoelectric film based on Bi2Te3 for wearable applications

In recent years, with the development of the Internet of Things (IoT) and wearable technology, the research and exploration of thermoelectric materials have been greatly promoted. However, traditional thermoelectric materials are rigid and brittle. Thermoelectric devices made of these materials usually cannot be closely attached to the heat and cold sources that provide temperature differences, thus limiting the application of thermoelectric materials. Therefore, manufacturing new high-performance flexible thermoelectric devices is still a huge challenge. In this work, polyimide/copper (PI/Cu) substrate was deposited by electron deposition technology. The flexible thermoelectric thin film device was fabricated by bonding [Formula: see text]-type and [Formula: see text]-type bismuth telluride (Bi2Te[Formula: see text] slurries onto the PI/Cu substrate. Then, the PDMS film was coated on the device to make the device waterproof and oxidation resistant. The output voltage and maximum power of this device, at the temperature of 80 K, reach 97.5 mV and 60 uW, respectively. After 200 cycles of cyclic bending experiments, 90% high conductivity retention can be maintained. It demonstrates that the new flexible thermoelectric thin film has good flexibility and excellent stability. This work provides a simple method for the preparation of flexible thermoelectric thin films and opens up a new way for its application in the sensing equipment and wearable device of the IoT.