Annealing of lead zirconate titanate (65/35) thin films for ultra large scale integration storage dielectric applications: Phase transformation and electrical characteristics

1992 ◽  
Vol 21 (5) ◽  
pp. 503-512 ◽  
Author(s):  
Vinay Chikarmane ◽  
Jiyoung Kim ◽  
Chandra Sudhama ◽  
Jack Lee ◽  
Al Tasch ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Lead Zirconate Titanate ◽  
Large Scale ◽  
Lead Zirconate ◽  
Electrical Characteristics ◽  
Zirconate Titanate ◽  
Large Scale Integration ◽  
Scale Integration

Thickness‐dependent electrical characteristics of lead zirconate titanate thin films

1995 ◽  
Vol 77 (8) ◽  
pp. 3981-3986 ◽  
Author(s):  
K. R. Udayakumar ◽  
P. J. Schuele ◽  
J. Chen ◽  
S. B. Krupanidhi ◽  
L. E. Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Electrical Characteristics ◽  
Zirconate Titanate

The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Vinay Chikarmane ◽  
Chandra Sudhama ◽  
Jiyoung Kim ◽  
Jack Lee ◽  
A I Tasch
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Large Scale ◽  
Random Access ◽  
Lead Zirconate ◽  
Thermal Budget ◽  
Low Leakage ◽  
Zirconate Titanate ◽  
Low Leakage Current ◽  
Scale Integration

AbstractThe feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.

Electrical characteristics of (100), (111), and randomly aligned lead zirconate titanate thin films

1994 ◽  
Vol 76 (11) ◽  
pp. 7478-7482 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Wong Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Electrical Characteristics ◽  
Zirconate Titanate

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

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