Phase Separation in InGaN/GaN Multiple Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
M. D. Mccluskey ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
D. P. Bour ◽  
C. Chua ◽  
...  
Keyword(s):  
Phase Separation ◽  
Active Region ◽  
Quantum Wells ◽  
Broad Peak ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Peaks

AbstractEvidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells (MQW's). After annealing for 4 min at a temperature of 1100 °C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of Inrich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase.

Microarea Strain Analysis in InGaN/GaN Multiple Quantum Wells onm-Plane Using High-Resolution Microbeam X-ray Diffraction

2013 ◽  
Vol 52 (7R) ◽  
pp. 071001
Author(s):  
Shunji Yoshida ◽  
Toshiya Yokogawa ◽  
Yasuhiko Imai ◽  
Shigeru Kimura
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Strain Analysis ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray

Kinematic versus dynamic approaches of x‐ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

1996 ◽  
Vol 79 (5) ◽  
pp. 2332-2336 ◽  
Author(s):  
E. Idiart‐Alhor ◽  
J. Y. Marzin ◽  
M. Quillec ◽  
G. Le Roux ◽  
G. Patriarche
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray

Growth and Characterization of AlGaN/GaN Heterostructures with Multiple Quantum Wells by PAMBE

1996 ◽  
Vol 423 ◽  
Author(s):  
K. H. Shim ◽  
J. M. Myoung ◽  
O. V. Gluschenkov ◽  
C. Kim ◽  
K. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Functional Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Good Agreement

AbstractAlGaN/GaN heterostructures with multiple quantum wells were grown by plasmaassisted molecular beam epitaxy (PAMBE). Structural and optical properties of the heterostructures were analyzed using x-ray diffraction, cathodoldminescence, and photoluminescence. Interband transitions were clearly observed in the GaN quantum wells at both room- and liquid-helium temperatures. The efficiency of the interband recombination due to the confinement effect was greatly enhanced in the thinner quantum wells. The functional dependence of the interband peaks on the well thickness is shown to be in good agreement with the calculated positions of the quantized levels in the wells.

INTERFACIAL PROPERTY OF THE PSEUDOMORPHIC InGaAs/AlGaAs MULTIPLE QUANTUM WELLS

2001 ◽  
Vol 08 (05) ◽  
pp. 537-540
Author(s):  
D. H. ZHANG
Keyword(s):  
Quantum Wells ◽  
Energy Levels ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Interfacial Property ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
P Type

The effects of Be doping in the wells of the p-type pseudomorphic InGaAs/AlGaAs multiple quantum wells were characterized using photoluminescence and X-ray diffraction techniques. It is found that high doping in the wells causes shift of energy levels and deteriorates the well–barrier interfaces of the quantum well structures. The shift of the energy levels is mainly due to the band gap shrinkage while the interface roughness can be explained by interstitial doping.

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