An experimental study of edge radius effect on cutting single crystal silicon

2003 ◽  
Vol 22 (9-10) ◽  
pp. 703-707 ◽  
Author(s):  
F. Z. Fang ◽  
G. X. Zhang
Keyword(s):  
Experimental Study ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Edge Radius

In situ experimental study on material removal behaviour of single-crystal silicon in nanocutting

2019 ◽  
Vol 152 ◽  
pp. 378-383 ◽  
Author(s):  
Bing Liu ◽  
Zongwei Xu ◽  
Cheng Chen ◽  
Rui Li ◽  
Chaohao Wang ◽  
...  
Keyword(s):  
Experimental Study ◽  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Dependence of Profiles of Arsenic Implanted into Silicon on Tilt and Rotation Angles

1991 ◽  
Vol 235 ◽  
Author(s):  
S. Yang ◽  
C. Park ◽  
K. Klein ◽  
P. Gupta ◽  
A. Tasch ◽  
...  
Keyword(s):  
Experimental Study ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Experimental Results ◽  
Primary Sources ◽  
Crystal Silicon ◽  
Wide Range

ABSTRACTWe have performed a comprehensive experimental study of profiles of arsenic implanted into (100) silicon for a wide range of energies, doses, tilt angles, and rotation angles. Critical angles for channeling of arsenic ions in single-crystal silicon have been calculated and are found to agree well with experimental results. The <100> axial channels and the {110} planar channels are found to be primary sources of channeling. The optimal tilt and rotation angles which minimize channeling and maximize uniformity across a wafer are deduced.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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