Experimental study on size effect of tool edge and subsurface damage of single crystal silicon in nano-cutting

2018 ◽  
Vol 98 (5-8) ◽  
pp. 1093-1101 ◽  
Author(s):  
Bing Liu ◽  
Fengzhou Fang ◽  
Rui Li ◽  
Zongwei Xu ◽  
Yanshu Liang
Keyword(s):  
Experimental Study ◽  
Size Effect ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Tool Edge

Numerical investigation on subsurface damage in nanometric cutting of single-crystal silicon at elevated temperatures

2021 ◽  
Vol 68 ◽  
pp. 1060-1071
Author(s):  
Changlin Liu ◽  
Xiao Chen ◽  
Jinyang Ke ◽  
Zhongdi She ◽  
Jianguo Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Numerical Investigation ◽  
Elevated Temperatures ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Nanometric Cutting

Residual Area Max Depth Model for Nanoindentation Hardness Size Effect of Single Crystal Silicon

2007 ◽  
Vol 339 ◽  
pp. 389-394
Author(s):  
L. Zhou ◽  
Ying Xue Yao ◽  
Shahjada Ahmed Pahlovy
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Indentation Size Effect ◽  
Peak Load ◽  
Single Crystal Silicon ◽  
Indentation Hardness ◽  
Indentation Size ◽  
Crystal Silicon ◽  
New Model ◽  
Nanoindentation Hardness

In material nanoindentation hardness testing, the hardness will decrease with the indentation depth or peak load increase, i.e. indentation size effect (ISE). There are several models and equations were proposed to describe ISE. But the variables self-inaccurate in these models and equations, it will affect the result trueness. Single crystal silicon was used for nanoindentation experiments, and max depths were obtained from these experiments. Combining Matlab software, residual areas were obtained by atomic force microscopy (AFM). Based on max depth and residual area, a new model—residual area max depth model was proposed for indentation size effect in nanoindentaion hardness. The new model perhaps can understand and describe ISE in indentation hardness better than other models and equations.

Lubricating effect of graphene during ultra-precision mechanical polishing by atomic scale simulation

2021 ◽  
pp. 095440542110564
Author(s):  
Houfu Dai ◽  
Weilong Wu ◽  
Yang Hu
Keyword(s):  
Friction Coefficient ◽  
Potential Energy ◽  
Single Crystal ◽  
Solid Lubricant ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Energy Stress ◽  
Three Body ◽  
Diamond Abrasive

As a new two-dimensional material with unique friction and wear properties, graphene often serves as a solid lubricant. In order to better understand the lubrication effect of graphene in the process of three-body polishing of single crystal silicon with diamond abrasive, a molecular dynamics model of this process was established in this study. Further, the changes of coordination number, friction coefficient, temperature, potential energy, stress, and surface/subsurface damage in the process of three-body polishing were analyzed in detail. The results showed that graphene lubrication could enhance the heat dissipation and reduce the number of defect atoms, friction coefficient, potential energy, stress, and chips. Therefore, less subsurface damage and material resistance were observed in the workpiece with graphene lubrication during machining. In general, graphene can be used as a high-quality solid lubricant in the three-body polishing of single crystal silicon using diamond abrasive because of its excellent lubricating effect.

A Study of Subsurface Damage Generation by Single Scratches of Silicon

1988 ◽  
Vol 140 ◽  
Author(s):  
J.H. Ahn ◽  
S. Danyluk
Keyword(s):  
Electrical Resistivity ◽  
Steady State ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Electrical Contacts ◽  
Crystal Silicon ◽  
Printed Circuit

AbstractThis paper describes the use of electrical resistivity to quantify the damage produced asa result of the scratching of single crystal silicon.The change in resistivity was measured as a function of time as a scratching diamond passed between four electrical contacts of a specially designed printed circuit and while thesilicon was heated to temperatures up to 300ºC. The data shows that the resistivity increases during scratching and reaches a steady state value if the silicon temperatureis below 200ºC. The conductivity recovers when the silicon temperature is 200ºC.

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