Formability and microstructure evolution of Ti-6Al-4 V alloy in electric hot incremental forming

Author(s):  
Chengxin Liu ◽  
Honggang Duan ◽  
Xingrong Chu ◽  
He Li ◽  
Zhiyong Zhao ◽  
...  
2014 ◽  
Vol 29 (9) ◽  
pp. 941
Author(s):  
JIANG Jin-Long ◽  
WANG Qiong ◽  
HUANG Hao ◽  
ZHANG Xia ◽  
WANG Yu-Bao ◽  
...  

2020 ◽  
Vol 38 (8A) ◽  
pp. 1137-1142
Author(s):  
Baqer A. Ahmed ◽  
Saad K. Shather ◽  
Wisam K. Hamdan

In this paper the Magnetic Abrasive Finishing (MAF) was utilized after Single Point Incremental Forming (SPIF) process as a combined finishing process. Firstly, the Single Point Incremental forming was form the truncated cone made from low carbon steel (1008-AISI) based on Z-level tool path then the magnetic abrasive finishing process was applied on the surface of the formed product. Box-Behnken design of experiment in Minitab 17 software was used in this study. The influences of different parameters (feed rate, machining step size, coil current and spindle speed) on change in Micro-Vickers hardness were studied. The maximum and minimum change in Micro-Vickers hardness that achieved from all the experiments were (40.4 and 1.1) respectively. The contribution percent of (feed rate, machining step size, coil current and spindle speed) were (7.1, 18.068, 17.376 and 37.894) % respectively. After MAF process all the micro surface cracks that generated on the workpiece surface was completely removed from the surface.


Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.


Sign in / Sign up

Export Citation Format

Share Document