scholarly journals The EMC effect at low $x$ in perturbative QCD

1997 ◽  
Vol 76 (1) ◽  
pp. 81-90 ◽  
Author(s):  
N. Armesto ◽  
M.A. Braun
Keyword(s):  
Perturbative Qcd ◽  
Emc Effect ◽  
Low X

scholarly journals HARD-POMERON BEHAVIOR OF THE LONGITUDINAL STRUCTURE FUNCTION FL IN THE NEXT-TO-LEADING ORDER AT LOW x

2009 ◽  
Vol 18 (01) ◽  
pp. 131-140 ◽  
Author(s):  
G. R. BOROUN
Keyword(s):  
Perturbation Theory ◽  
Structure Function ◽  
Perturbative Qcd ◽  
Gluon Distribution ◽  
Analytic Formula ◽  
Leading Order ◽  
Longitudinal Structure ◽  
Longitudinal Structure Function ◽  
Low X

We present an analytic formula to extract the longitudinal structure function in the next-to-leading order of the perturbation theory at low x, from the Regge-like behavior of the gluon distribution and the structure function at this limit. In this approach, the longitudinal structure function has the hard-Pomeron behavior. The determined values are compared with the H1 data and MRST model. All results can consistently be described within the framework of perturbative QCD, which essentially show increases as x decreases.

Properties of the perturbative QCD pomeron and structure functions at low X

1992 ◽  
Vol 29 (1) ◽  
pp. 84-88 ◽  
Author(s):  
R. Kirschner ◽  
L.N. Lipatov ◽  
L. Szymanowski
Keyword(s):  
Perturbative Qcd ◽  
Structure Functions ◽  
Low X ◽  
Qcd Pomeron

The valon model and the low-x behavior of the EMC effect

1987 ◽  
Vol 187 (3-4) ◽  
pp. 405-408 ◽  
Author(s):  
Chao-hsi Chang ◽  
Wei Zhu
Keyword(s):  
Emc Effect ◽  
Low X

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

scholarly journals Bd,s0→f1f1 decays with f1(1285)−f1(1420) mixing in the perturbative QCD approach

2020 ◽  
Vol 102 (11) ◽  
Author(s):  
Zewen Jiang ◽  
De-Hua Yao ◽  
Zhi-Tian Zou ◽  
Xin Liu ◽  
Ying Li ◽  
...  
Keyword(s):  
Perturbative Qcd

Progress Towards Arrays of Microcalorimeter X-Ray Detectors

2001 ◽  
Vol 7 (S2) ◽  
pp. 1050-1051 ◽  
Author(s):  
S.W. Nam ◽  
D.A. Wollman ◽  
Dale E. Newbury ◽  
G.C. Hilton ◽  
K.D. Irwin ◽  
...  
Keyword(s):  
Real Time ◽  
Energy Resolution ◽  
Count Rate ◽  
Small Area ◽  
High Performance ◽  
X Ray ◽  
Pixel Array ◽  
Primary Advantage ◽  
Low X ◽  
Single Pixel

The high performance of single-pixel microcalorimeter EDS (μ,cal EDS) has been shown to be very useful for a variety of microanalysis cases. The primary advantage of jxcal EDS over conventional EDS is the factor of 25 improvement in energy resolution (∽3 eV in real-time). This level of energy resolution is particularly important for applications such as nanoscale contaminant analysis where it is necessary to resolve peak overlaps at low x-ray energies. Because μcal EDS offers practical solutions to many microanalysis problems, several companies are proceeding with commercialization of single-pixel μal EDS technology. Two drawbacks limiting the application of uxal EDS are its low count rate (∽500 s−1) and small area (∽0.04 mm for a bare single pixel, ∽5 mm2 with a polycapillary optic). We are developing a 32x32 pixel array with a total area of 40 mm2 and with a total count rate between 105 s−1 and 106 s−1.

scholarly journals Stabilization of Superionic-Conducting High-Temperature Phase of Li(Cb9h10) via Solid Solution Formation with Li2(B12H12)

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 330
Author(s):  
Sangryun Kim ◽  
Kazuaki Kisu ◽  
Shin-ichi Orimo
Keyword(s):  
High Temperature ◽  
Solid Solutions ◽  
Ionic Conduction ◽  
Lithium Ion ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Solid Solution Formation ◽  
Low X ◽  
T Phase ◽  
Complex Anions

We report the stabilization of the high-temperature (high-T) phase of lithium carba-closo-decaborate, Li(CB9H10), via the formation of solid solutions in a Li(CB9H10)-Li2(B12H12) quasi-binary system. Li(CB9H10)-based solid solutions in which [CB9H10]− is replaced by [B12H12]2− were obtained at compositions with low x values in the (1−x)Li(CB9H10)−xLi2(B12H12) system. An increase in the extent of [B12H12]2− substitution promoted stabilization of the high-T phase of Li(CB9H10), resulting in an increase in the lithium-ion conductivity. Superionic conductivities of over 10−3 S cm−1 were achieved for the compounds with 0.2 ≤ x ≤ 0.4. In addition, a comparison of the Li(CB9H10)−Li2(B12H12) system and the Li(CB9H10)−Li(CB11H12) system suggests that the valence of the complex anions plays an important role in the ionic conduction. In battery tests, an all-solid-state Li–TiS2 cell employing 0.6Li(CB9H10)−0.4Li2(B12H12) (x = 0.4) as a solid electrolyte presented reversible battery reactions during repeated discharge–charge cycles. The current study offers an insight into strategies to develop complex hydride solid electrolytes.

scholarly journals Tailoring the electron and hole dimensionality to achieve efficient and stable metal halide perovskite scintillators

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Zhifang Tan ◽  
Jincong Pang ◽  
Guangda Niu ◽  
Jun-Hui Yuan ◽  
Kan-Hao Xue ◽  
...  
Keyword(s):  
Water Solubility ◽  
Radiation Stability ◽  
Metal Halide ◽  
Lead Free ◽  
X Ray ◽  
Metal Halide Perovskite ◽  
Bonding Interaction ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Low X

Abstract Metal halide perovskites have recently been reported as excellent scintillators for X-ray detection. However, perovskite based scintillators are susceptible to moisture and oxygen atmosphere, such as the water solubility of CsPbBr3, and oxidation vulnerability of Sn2+, Cu+. The traditional metal halide scintillators (NaI: Tl, LaBr3, etc.) are also severely restricted by their high hygroscopicity. Here we report a new kind of lead free perovskite with excellent water and radiation stability, Rb2Sn1-x Te x Cl6. The equivalent doping of Te could break the in-phase bonding interaction between neighboring octahedra in Rb2SnCl6, and thus decrease the electron and hole dimensionality. The optimized Te content of 5% resulted in high photoluminescence quantum yield of 92.4%, and low X-ray detection limit of 0.7 µGyair s−1. The photoluminescence and radioluminescence could be maintained without any loss when immersing in water or after 480,000 Gy radiations, outperforming previous perovskite and traditional metal halides scintillators.

Sign in / Sign up

Export Citation Format

Share Document