Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni2+ ion implanted zinc oxide (ZnO) thin films

2012 ◽  
Vol 107 (2) ◽  
pp. 393-400 ◽  
Author(s):  
B. Joshi ◽  
S. Ghosh ◽  
P. Srivastava ◽  
P. Kumar ◽  
D. Kanjilal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Transport ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Ion Implanted

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Room-temperature ferromagnetism in n-type Cu-doped ZnO thin films

2007 ◽  
Vol 102 (3) ◽  
pp. 033905 ◽  
Author(s):  
D. L. Hou ◽  
X. J. Ye ◽  
X. Y. Zhao ◽  
H. J. Meng ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno

scholarly journals Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Rf Sputtering ◽  
Argon Pressure ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Optical Band Gaps

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

The origin of room temperature ferromagnetism in cobalt-doped zinc oxide thin films fabricated by PLD

2004 ◽  
Vol 24 (6) ◽  
pp. 1847-1851 ◽  
Author(s):  
Jae Hyun Kim ◽  
Hyojin Kim ◽  
Dojin Kim ◽  
YoungEon Ihm ◽  
Woong Kil Choo
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Oxide Thin Films

Room Temperature Ferromagnetism and Fast Ultraviolet Photoresponse of Inkjet-Printed Mn-Doped ZnO Thin Films

2010 ◽  
Vol 46 (6) ◽  
pp. 2152-2155 ◽  
Author(s):  
Yan Wu ◽  
K. V. Rao ◽  
Wolfgang Voit ◽  
Takahiko Tamaki ◽  
O. D. Jayakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

The Effect of Substrate Temperature on the Room Temperature Ferromagnetism of Co-Doped ZnO Thin Films

2008 ◽  
Vol 37 (5) ◽  
pp. 831-834 ◽  
Author(s):  
Wang Zhuliang ◽  
Li Xiaoli ◽  
Jiang Fengxian ◽  
Tian Baoqiang ◽  
Lü Baohua ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped
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