High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

2014 ◽  
Vol 114 (4) ◽  
pp. 1049-1053 ◽  
Author(s):  
Jianli Zhang ◽  
Chuanbing Xiong ◽  
Junlin Liu ◽  
Zhijue Quan ◽  
Li Wang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Si Substrate ◽  
Yellow Light ◽  
High Brightness ◽  
Light Emitting ◽  
Strain Modulation

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

1995 ◽  
Vol 34 (Part 2, No. 7A) ◽  
pp. L797-L799 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Naruhito Iwasa ◽  
Shin-ichi Nagahama
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
High Brightness ◽  
Light Emitting ◽  
Quantum Well Structures

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

High-Brightness Blue-Green Light-Emitting Diodes on ZnSe Substrates

1995 ◽  
Vol 187 (2) ◽  
pp. 467-470 ◽  
Author(s):  
W. C. Harsch ◽  
G. Cantwell ◽  
J. F. Schetzina
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
High Brightness ◽  
Light Emitting

scholarly journals High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers

2008 ◽  
Vol 20 (8) ◽  
pp. 659-661 ◽  
Author(s):  
Chia-En Lee ◽  
Yea-Chen Lee ◽  
Hao-Chung Kuo ◽  
Tien-Chang Lu ◽  
Shing-Chung Wang
Keyword(s):  
Light Scattering ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting

scholarly journals Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Temperature Dependent ◽  
High Brightness ◽  
Light Emitting

High‐brightness InGaAlP green light‐emitting diodes

1992 ◽  
Vol 61 (15) ◽  
pp. 1775-1777 ◽  
Author(s):  
H. Sugawara ◽  
K. Itaya ◽  
H. Nozaki ◽  
G. Hatakoshi
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
High Brightness ◽  
Light Emitting

scholarly journals High-performance large-area quasi-2D perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Changjiu Sun ◽  
Yuanzhi Jiang ◽  
Minghuan Cui ◽  
Lu Qiao ◽  
Junli Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Intermediate Phase ◽  
Formation Enthalpy ◽  
Phase Segregation ◽  
Phase Changes ◽  
Large Area ◽  
High Brightness ◽  
Light Emitting ◽  
Performance Decline

AbstractSerious performance decline arose for perovskite light-emitting diodes (PeLEDs) once the active area was enlarged. Here we investigate the failure mechanism of the widespread active film fabrication method; and ascribe severe phase-segregation to be the reason. We thereby introduce L-Norvaline to construct a COO−-coordinated intermediate phase with low formation enthalpy. The new intermediate phase changes the crystallization pathway, thereby suppressing the phase-segregation. Accordingly, high-quality large-area quasi-2D films with desirable properties are obtained. Based on this, we further rationally adjusted films’ recombination kinetics. We reported a series of highly-efficient green quasi-2D PeLEDs with active areas of 9.0 cm2. The peak EQE of 16.4% is achieved in <n > = 3, represent the most efficient large-area PeLEDs yet. Meanwhile, high brightness device with luminance up to 9.1 × 104 cd m−2 has achieved in <n> = 10 film.

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