Lattice constant and band gap of ZnOxSe1−x (0 ≤ x ≤ 0.25) acquired by the first-principles calculations

First-principles calculations are performed to study the structural, electronic, thermodynamic and thermal properties of the InP and InAs bulk materials and InAs x P 1-x ternary alloys using the full potential-linearized augmented plane wave method (FP-LAPW) within the density functional theory (DFT). The dependence of the lattice constant, bulk modulus, band gap, Debye temperature, heat capacity and mixing entropy on the composition x was analyzed. The lattice constant for InAs x P 1-x alloys exhibits a marginal deviation from the Vegard's law. A large deviation of the bulk modulus from linear concentration dependence (LCD) was observed for our alloys. We found that the composition dependence of the energy band gap is almost linear by using the mBJ and EV-GGA approximations. The microscopic origins of the gap bowing were explained and detailed by using the approach of Zunger and co-workers. Furthermore, the calculated phase diagram shows a miscibility gap for these alloys with a high critical temperature. Thermal effects on some macroscopic properties of InAs x P 1-x alloys are predicted using the quasi-harmonic Debye model, in which the phononic effects are considered. This is the first quantitative theoretical prediction of the thermal properties of the InAs x P 1-x alloys, and we still expect the confirmation of experimental studies.

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Locating impurity and defect levels in the host band gap by first-principles calculations: Pure and Ce3+-doped YAlO3

Optical Materials ◽

10.1016/j.optmat.2021.110843 ◽

2021 ◽

Vol 113 ◽

pp. 110843

Author(s):

M.G. Brik ◽

C.-G. Ma ◽

M. Piasecki ◽

A. Suchocki

Keyword(s):

Band Gap ◽

First Principles ◽

First Principles Calculations ◽

Impurity And Defect Levels ◽

Defect Levels

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Band-gap engineering of CdS, CdSe and ZnSe first-principles calculations

2016 International Renewable and Sustainable Energy Conference (IRSEC) ◽

10.1109/irsec.2016.7983969 ◽

2016 ◽

Author(s):

Rachida Lamouri ◽

El Mehdi Salmani ◽

Hamid Ez-zahraouy ◽

Abdelilah Benyoussef

Keyword(s):

Band Gap ◽

First Principles ◽

First Principles Calculations ◽

Band Gap Engineering

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Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽

10.1039/c5ra16877e ◽

2015 ◽

Vol 5 (102) ◽

pp. 83876-83879 ◽

Cited By ~ 23

Author(s):

Chengyong Xu ◽

Paul A. Brown ◽

Kevin L. Shuford

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Plane Strain ◽

Material Properties ◽

First Principles ◽

Tensile Strain ◽

First Principles Calculations ◽

Direct Band Gap ◽

Direct Band ◽

Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

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First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽

10.3390/nano8110876 ◽

2018 ◽

Vol 8 (11) ◽

pp. 876 ◽

Cited By ~ 1

Author(s):

Qi Qian ◽

Lei Peng ◽

Yu Cui ◽

Liping Sun ◽

Jinyan Du ◽

...

Keyword(s):

Optical Properties ◽

Solar Cells ◽

Band Gap ◽

Electronic Properties ◽

First Principles ◽

Future Application ◽

First Principles Calculations ◽

Electronic And Optical Properties ◽

Direct Bandgap ◽

The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

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First-Principles Calculations of Titanium Dopants in Alumina

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3095 ◽

2005 ◽

Vol 475-479 ◽

pp. 3095-3098

Author(s):

Katsuyuki Matsunaga ◽

Teruyasu Mizoguchi ◽

Atsutomo Nakamura ◽

Takahisa Yamamoto ◽

Yuichi Ikuhara

Keyword(s):

Band Gap ◽

First Principles ◽

Electronic Structures ◽

First Principles Calculations ◽

Pseudopotential Calculations ◽

Formation Energies

First-principles pseudopotential calculations were performed to investigate atomic and electronic structures of titanium (Ti) dopants in alumina (Al2O3). It was found that a substitutional Ti3+ defect induced an extra level occupied by one electron within the band gap of Al2O3. When two or more substitutional Ti3+ defects were located closely to each other, the defect-induced levels exhibited strong bonding interactions, and their formation energies decreased with increasing numbers of Ti3+ defects. This indicates that association and clustering of substitutional Ti3+ defects in Al2O3 can take place due to the interaction of the defect-induced levels.

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Structure and electronic properties of C2N/graphene predicted by first-principles calculations

RSC Advances ◽

10.1039/c5ra26873g ◽

2016 ◽

Vol 6 (34) ◽

pp. 28484-28488 ◽

Cited By ~ 25

Author(s):

Dandan Wang ◽

DongXue Han ◽

Lei Liu ◽

Li Niu

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Water Splitting ◽

First Principles ◽

First Principles Calculations ◽

Gap Opening

Graphene band gap opening is achieved when integrated with C2N. C2N/graphene heterostructures are promising materials for FETs and water splitting.

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COMPARATIVE STUDY OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF BN(5, 5) AND C(5, 5) NANOTUBES UNDER PRESSURE

International Journal of Modern Physics B ◽

10.1142/s0217979210056876 ◽

2010 ◽

Vol 24 (24) ◽

pp. 4851-4859

Author(s):

KAIHUA HE ◽

GUANG ZHENG ◽

GANG CHEN ◽

QILI CHEN ◽

MIAO WAN ◽

...

Keyword(s):

High Pressure ◽

Comparative Study ◽

Charge Density ◽

Band Gap ◽

Electronic Properties ◽

Cross Section ◽

First Principles ◽

First Principles Calculations ◽

Zinc Blende ◽

Structural And Electronic Properties

The structural and electronic properties of BN(5, 5) and C(5, 5) nanotubes under pressure are studied by using first principles calculations. In our study range, BN(5, 5) undergoes obvious elliptical distortion, while for C(5, 5) the cross section first becomes an ellipse and then, under further pressure, is flattened. The band gap of BN(5, 5) decreases with increasing pressure, which is inverse to that of zinc blende BN, whereas for C(5, 5) the metallicity is always preserved under high pressure. The population of charge density indicates that intertube bonding is formed under pressure. We also find that BN(5, 5) may collapse, and a new polymer material based on C(5, 5) is formed by applying pressure.

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A New Phase of GaN

Journal of Chemistry ◽

10.1155/2016/8612892 ◽

2016 ◽

Vol 2016 ◽

pp. 1-9 ◽

Cited By ~ 8

Author(s):

Qingyang Fan ◽

Changchun Chai ◽

Qun Wei ◽

Jionghao Yang ◽

Peikun Zhou ◽

...

Keyword(s):

Band Gap ◽

First Principles ◽

Elastic Anisotropy ◽

Ambient Pressure ◽

Young Modulus ◽

Structure Study ◽

First Principles Calculations ◽

Hydrogen Storage Material ◽

Storage Material ◽

New Phase

The structural, mechanical, and electronic properties of the orthorhombic GaN (Pnma-GaN) are investigated at ambient pressure by using first-principles calculations method with the ultrasoft pseudopotential scheme. The elastic constants and phonon calculations reveal Pnma-GaN is mechanically and dynamically stable at ambient pressure. The calculated Young modulus of Pnma-GaN is 170 GPa, which is the three-fifths of wurtzite-GaN. Electronic structure study shows that Pnma-GaN is a direct semiconductor with band gap of 1.847 eV. The anisotropic calculation shows that wurtzite-GaN has a smaller elastic anisotropy than that of Pnma-GaN in Young’s modulus. In addition, when the composition of aluminum increases from 0 to 0.063 in the alloy, the band gap decreases initially and increases afterward for Pnma-Ga1−xAlxN, while, for wurtzite-Ga1−xAlxN, the band gap increases with the increasing compositionx. Due to the structural porous feature, Pnma-GaN can also be expected to be a good hydrogen storage material.

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