Void-free BCB adhesive wafer bonding with high alignment accuracy

2014 ◽  
Vol 21 (8) ◽  
pp. 1633-1641 ◽  
Author(s):  
Zhen Song ◽  
Zhimin Tan ◽  
Litian Liu ◽  
Zheyao Wang
Keyword(s):  
Wafer Bonding ◽  
Alignment Accuracy

Aligned Low Temperature Wafer Bonding for MEMS Manufacturing: Challenges and Promises

2007 ◽  
Vol 1052 ◽  
Author(s):  
Viorel Dragoi ◽  
Thorsten Matthias ◽  
Gerald Mittendorfer ◽  
Paul Lindner
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Process Temperature ◽  
Alignment Accuracy ◽  
Mems Devices ◽  
Intermediate Layers ◽  
Optical Alignment ◽  
Technological Interest

AbstractThe increased complexity of current generations of MEMS devices imposes new requirements for wafer bonding. Among these can be mentioned low process temperature (<400°C), precise optical alignment of substrates, ability to bond a large variety of substrates and the possibility to bond with defined intermediate layers. An important aspect in aligned wafer bonding is that alignment accuracy needs to be correlated to the type of bond process. Especially in case of processes using bonding layers the post-bond alignment accuracy will be given by the behavior of the bonding layers. This paper aims to review the main criteria to be considered in defining aligned wafer bonding processes. Particularly bonding of substrates containing electronics (e.g. CMOS wafers) is currently of high technological interest.

Measurement of Alignment Accuracy for Wafer Bonding by Moiré Method

2007 ◽  
Vol 46 (4B) ◽  
pp. 1989-1993 ◽  
Author(s):  
Chenxi Wang ◽  
Tadatomo Suga
Keyword(s):  
Wafer Bonding ◽  
Alignment Accuracy ◽  
Moire Method

scholarly journals Moiré-Based Alignment Using Centrosymmetric Grating Marks for High-Precision Wafer Bonding

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 339 ◽  
Author(s):  
Boyan Huang ◽  
Chenxi Wang ◽  
Hui Fang ◽  
Shicheng Zhou ◽  
Tadatomo Suga
Keyword(s):  
High Precision ◽  
Wafer Bonding ◽  
Alignment Accuracy ◽  
Heterogeneous Integration ◽  
Alignment Method ◽  
Wafer Level ◽  
Bonding System ◽  
Alignment System ◽  
Working Principle ◽  
Better Than

High-precision aligned wafer bonding is essential to heterogeneous integration, with the device dimension reduced continuously. To get the alignment more accurately and conveniently, we propose a moiré-based alignment method using centrosymmetric grating marks. This method enables both coarse and fine alignment steps without requiring additional conventional cross-and-box alignment marks. Combined with an aligned wafer bonding system, alignment accuracy better than 300 nm (3σ) was achieved after bonding. Furthermore, the working principle of the moiré-based alignment for the backside alignment system was proposed to overcome the difficulty in bonding of opaque wafers. We believe this higher alignment accuracy is feasible to satisfy more demanding requirements in wafer-level stacking technologies.

Die-to-Wafer Bonding of Thin Dies using a 2-Step Approach; High Accuracy Placement, then Gang Bonding

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001254-001281 ◽  
Author(s):  
Gilbert Lecarpentier ◽  
Rahul Agarwal ◽  
Wenqi Zhang ◽  
Paresh Limaye ◽  
Riet Labie ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
High Accuracy ◽  
Bonding Process ◽  
Test Structure ◽  
Alignment Accuracy ◽  
Special Test ◽  
Electrical Measurements

25 um thick dies, mounted on thick carrier die, were placed on a 300mm landing wafer using the High Accuracy Die Bonder SET-FC300. The bonding process was either Cu/Cu or Cu/Sn with respective pitch of 10μm and 40μm. A special test structure was designed on the landing die to electrically determine the alignment accuracy after bonding - both with respect to the X-Y alignment and the rotation. Stacks were then assembled by collective hybrid bonding process. The top die is aligned and placed on the landing wafer coverer by a patterned polymer acting as a temporary alignment holder, and then the populated wafer is moved to a wafer bonder where all the dies are collectively bonded. Electrical measurements on the alignment structures indicate that maximum misalignment of the TSV to the landing pad is in the range of 1.5–1.75 um and the maximum rotation of the die is 0.03 degrees.

Effects of Bonding Process Parameters on Wafer-to-Wafer Alignment Accuracy in Benzocyclobutene (BCB) Dielectric Wafer Bonding

2005 ◽  
Vol 863 ◽  
Author(s):  
F. Niklaus ◽  
R.J. Kumar ◽  
J.J. McMahon ◽  
J. Yu ◽  
T. Matthias ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Layer Thickness ◽  
Wafer Bonding ◽  
Three Dimensional ◽  
Bonding Process ◽  
Alignment Accuracy ◽  
Wafer Level ◽  
Bonding Parameters ◽  
Wafer Pair ◽  
The Impact

AbstractWafer-level three-dimensional (3D) integration is an emerging technology to increase the performance and functionality of integrated circuits (ICs). Aligned wafer-to-wafer bonding with dielectric polymer layers (e.g., benzocyclobutene (BCB)) is a promising approach for manufacturing of 3D ICs, with minimum bonding impact on the wafer-to-wafer alignment accuracy essential. In this paper we investigate the effects of thermal and mechanical bonding parameters on the achievable post-bonding wafer-to-wafer alignment accuracy for polymer wafer bonding with 200 mm diameter wafers. Our baseline wafer bonding process with softbaked BCB (∼35% cross-linked) has been modified to use partially cured (∼ 43% crosslinked) BCB. The partially cured BCB layer does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or slight shear forces at the bonding interface. As a result, the non-uniformity of the BCB layer thickness after wafer bonding is less than 0.5% of the nominal layer thickness and the wafer shift relative to each other during the wafer bonding process is less than 1 μm (average) for 200 mm diameter wafers. The critical adhesion energy of a bonded wafer pair with the partially cured BCB wafer bonding process is similar to that with soft-baked BCB.

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