Effect of localized KrF excimer laser treatment on fracture behaviors of freestanding  and  single crystal silicon beams

2015 ◽  
Vol 22 (2) ◽  
pp. 379-386
Author(s):  
M. Elwi Mitwally ◽  
T. Tsuchiya ◽  
O. Tabata ◽  
S. Sedky
Keyword(s):  
Single Crystal ◽  
Laser Treatment ◽  
Excimer Laser ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Fracture Behaviors ◽  
Krf Excimer Laser ◽  
Silicon Beams

scholarly journals OS1513 Improvement of surface roughness and tensile strength of single crystal silicon microstructures using excimer laser treatment

2014 ◽  
Vol 2014 (0) ◽  
pp. _OS1513-1_-_OS1513-2_
Author(s):  
Toshiyuki TSUCHIYA ◽  
Mohamed E. MITWALLY ◽  
Yoshikazu HIRAI ◽  
Osamu TABATA ◽  
Sherif SEDKY
Keyword(s):  
Surface Roughness ◽  
Tensile Strength ◽  
Single Crystal ◽  
Laser Treatment ◽  
Excimer Laser ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Microstructures

Single-Crystal Silicon Etching Characteristics Using Excimer Laser Cℓ2 GAS

1983 ◽  
Vol 29 ◽  
Author(s):  
T. Arikado ◽  
M. Sekine ◽  
H. Okano ◽  
Y. Horiike
Keyword(s):  
Single Crystal ◽  
Gas Phase ◽  
Excimer Laser ◽  
Plasma Etching ◽  
Etch Rate ◽  
Single Crystal Silicon ◽  
Silicon Etching ◽  
Crystal Silicon ◽  
Direct Irradiation ◽  
P Type

ABSTRACTSingle-crystal Si etching characteristics using an excimer laser (308 nm, XeCℓ) in the Cℓ2 gas have been studied. In lightly doped n-type and p-type Si, the etch rate of (100) is higher than that of (111), thus the (111) sidewall appears clearly for the irradiation to (100), while both orientations show almost the same etch rates in n+-doped Si. The n-type Si is etched spontaneously even by photo-dissociated Cℓ radicals generated in the gas phase, but no p-type Si etching occurs without direct irradiation. In addition, both types of etch rate-dependence on sheet resistance demonstrate that the number of electrons in the conduction band plays an essential role in the Si etching. This fact supports the field-assisted mechanism in the plasma etching proposed by Winters.

Phosphorus Doping into Silicon Using ArF Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
Abdelilah Slaoui ◽  
Francois Foulon ◽  
Eric Fogarassy ◽  
Paul Siffert
Keyword(s):  
Single Crystal ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Single Crystal Silicon ◽  
Chemical Doping ◽  
Concentration Profiles ◽  
Phosphorus Doping ◽  
Crystal Silicon ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTChemical doping of single-crystal silicon in a PF5 atmosphere is performed byirradiation with an ArF excimer laser working at 193 nm. We have investigated the dependence of doping parameters such as the number of pulses and PF5 gas pressure on the sheet resistance and the impurity concentration profiles. From these results, it is found that phosphorus atoms are produced by pyrolysis of PF5 molecules adsorbed (chemisorbed at low pressure and physisorbed at pressure higher than 1 Torr) on thesilicon surface. As for the incorporation mechanism, it is shown that the process is external rate limited for doping in PF5 ambient whereas mainly diffusion limitedfor doping using only the chemisorbed layer.

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