Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films

2010 ◽  
Vol 49 (12) ◽  
pp. 124001 ◽  
Author(s):  
Masahiro Mitani ◽  
Takahiko Endo ◽  
Shinzo Tsuboi ◽  
Takashi Okada ◽  
Genshiro Kawachi ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Excimer Laser ◽  
Crystallographic Orientation ◽  
Thin Film Transistor ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Crystal Silicon ◽  
Pseudo Single Crystal

Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates

1980 ◽  
Vol 1 ◽  
Author(s):  
D. K. Biegelsen ◽  
N. M. Johnson ◽  
D. J. Bartelink ◽  
M. D. Moyer
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistor ◽  
Single Crystal Silicon ◽  
Beam Spot ◽  
Crystal Silicon ◽  
Amorphous Substrates ◽  
Silicon Islands ◽  
Zone Growth ◽  
Lateral Heat

ABSTRACTThe importance of controlled lateral heat flow in the growth of single crystal silicon islands on amorphous substrates is demonstrated. In one approach the thermal profile on and around the islands is determined by varying the optical absorption with a variety of thin film structures. In another, beam spot shaping is used. Competitive nucleation is suppressed and continued in-plane epitaxial zone growth is enhanced. In this way we are able to produce single crystal islands 20μm wide and >20μm long. Routine production of such islands would enable new thin film transistor technologies.

Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6167-6170 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Measurement of Stress and Strain of Single-Crystal-Silicon Thin Film during On-Chip Tensile Test

1999 ◽  
Vol 119 (2) ◽  
pp. 67-72 ◽  
Author(s):  
Taeko Ando ◽  
Tetsuo Yoshioka ◽  
Mitsuhiro Shikida ◽  
Kazuo Sato ◽  
Tatsuo Kawabata
Keyword(s):  
Thin Film ◽  
Tensile Test ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Stress And Strain ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
On Chip

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

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