Enhancement of 5 GHz on-chip bandpass filter performance by using CMOS-MEMS inductors

2017 ◽  
Vol 24 (5) ◽  
pp. 2371-2377 ◽  
Author(s):  
Ja-Hao Chen
Keyword(s):  
Bandpass Filter ◽  
Filter Performance ◽  
Cmos Mems ◽  
On Chip ◽  
5 Ghz

A Novel Compact Thru-silicon-via On-chip Passive MMW Bandpass Filter for 77GHz Applications

PIERS Online ◽  
2009 ◽  
Vol 5 (7) ◽  
pp. 605-608
Author(s):  
Wayne Woods ◽  
Guoan Wang ◽  
Jiansheng Xu ◽  
Hanyi Ding ◽  
Shu Rong Dong ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
On Chip

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hole Mobility ◽  
Micro Electro Mechanical System ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Ir Sensor ◽  
Cantilever Structure ◽  
Cmos Mems ◽  
On Chip ◽  
Micro Cantilever

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

scholarly journals On-Chip Terahertz Bandpass Filter Based on Substrate Integrated Plasmonic Waveguide

2021 ◽  
pp. 104553
Author(s):  
Huali Zhu ◽  
Yong Zhang ◽  
Longfang Ye ◽  
Yukun Li ◽  
Yuehang Xu ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Plasmonic Waveguide ◽  
On Chip

Design and Fabrication of 5 GHz Miniaturized Bandpass Filter Using Superconducting Microstrip Quasi-Spiral Resonators

2007 ◽  
Vol 17 (2) ◽  
pp. 890-893 ◽  
Author(s):  
S. Ono ◽  
Y. Harada ◽  
A. Saito ◽  
M. Kimura ◽  
N. Sekiya ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
5 Ghz

60-GHz On-Chip Half-Mode SIW Bandpass Filter Using GaAs Technology

2021 ◽  
Author(s):  
Xiaoyu Weng ◽  
Kai-Da Xu ◽  
Yingjiang Guo ◽  
Qiang Chen
Keyword(s):  
Bandpass Filter ◽  
60 Ghz ◽  
On Chip

Integrated CMOS-MEMS with on-chip readout electronics for high-frequency applications

2006 ◽  
Vol 27 (6) ◽  
pp. 495-497 ◽  
Author(s):  
J. Verd ◽  
A. Uranga ◽  
J. Teva ◽  
J.L. Lopez ◽  
F. Torres ◽  
...  
Keyword(s):  
High Frequency ◽  
Readout Electronics ◽  
Cmos Mems ◽  
On Chip
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