Determination of the States of Oxidation of Metals in Thin Oxide Films by X-Ray Photoelectron Spectroscopy

2005 ◽  
Vol 60 (5) ◽  
pp. 431-435 ◽  
Author(s):  
N. V. Alov
1988 ◽  
Vol 32 ◽  
pp. 303-310
Author(s):  
T. Paul Adi ◽  
H. F. Stehmeyer

AbstractThe presence of metal oxide films from wave solder baths on timed module pins are partly responsible for non-wet problems in subsequent soldering steps. The cylindrical geometry of the pins lends itself to the characterization of thin oxide films by using the highly sensitive Debye-Scherrer camera method. As confirmed by Electron Hicroprobe Analysis (EMA), pins containing thin oxide films were used to obtain the diffraction patterns. A software program was developed that subtracts the diffraction angles of an oxids-free control pin from the pattern of the contaminated pin, and tabulates the residual d-spacing (interplanar distance) of the contaminant film.


2014 ◽  
Vol 47 (2) ◽  
pp. 575-583 ◽  
Author(s):  
Alistair Garner ◽  
Michael Preuss ◽  
Philipp Frankel

The present article describes a modification to the standard method of glancing-angle X-ray diffraction for accurate measurement of the texture of thin oxide films. The technique resolves the problems caused by overlapping diffraction peaks originating from multiphase materials with asymmetric unit cells and the peak broadening associated with sample tilt during glancing-angle texture measurement. The entire 2θ range of interest is recorded as a function of sample orientation, and the integrated intensities from different crystallographic planes are extracted from fitted diffraction profiles. The technique allows for pole figures to be plotted from diffraction peaks that could otherwise not be resolved and separates contributions from neighbouring peaks, leading to a more accurate representation of the existing oxide texture. The proposed method has been used for determining texture in a 3 µm layer of monoclinic/tetragonal zirconium oxide grown during aqueous corrosion testing and has been verified by additional synchrotron X-ray diffraction measurements.


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