Performance enhancement of recessed silicon channel double gate junctionless field-effect-transistor using TCAD tool

2021 ◽  
Author(s):  
Sandeep Kumar ◽  
Arun Kumar Chatterjee ◽  
Rishikesh Pandey
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Enhancement ◽  
Double Gate ◽  
Effect Transistor

Double-Gate Nanowire Field Effect Transistor for a Biosensor

Nano Letters ◽  
2010 ◽  
Vol 10 (8) ◽  
pp. 2934-2938 ◽  
Author(s):  
Jae-Hyuk Ahn ◽  
Sung-Jin Choi ◽  
Jin-Woo Han ◽  
Tae Jung Park ◽  
Sang Yup Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Effect Transistor

Temperature Sensitivity Analysis of Extended Source Double Gate Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar
Keyword(s):  
Temperature Sensitivity ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Of Temperature ◽  
Double Gate ◽  
Extended Source ◽  
Temperature Variations ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Abstract Temperature-induced performance variation is one of the main concerns of the conventional stack gate oxide double gate tunnel field-effect transistor (SGO-DG-TFET). In this regard, we investigate the temperature sensitivity of extended source double gate tunnel field-effect transistor (ESDG-TFET). For this, we have analyzed the effect of temperature variations on the transfer characteristics, analog/RF, linearity and distortion figure of merits (FOMs) using technology computer aided design (TCAD) simulations. Further, the temperature sensitivity performance is compared with conventional SGO-DG-TFET. The comparative analysis shows that ESDG-TFET is less sensitive to temperature variations compared to the conventional SGO-DG-TFET. Therefore, this indicates that ESDG-TFET is more reliable for low-power, high-frequency applications at a higher temperature compared to conventional SGO-DG-TFET.

Investigation of performance enhancement in InAs/InGaAs heterojunction-enhanced N-channel tunneling field-effect transistor

2015 ◽  
Vol 88 ◽  
pp. 90-98 ◽  
Author(s):  
Genquan Han ◽  
Bin Zhao ◽  
Yan Liu ◽  
Hongjuan Wang ◽  
Mingshan Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Enhancement ◽  
Effect Transistor
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